Dependence of ohmic contact properties on AlGaN layer thickness for AlGaN/GaN high-electron-mobility transistors

Yusuke Takei, Kazuo Tsutsui, Wataru Saito, Kuniyuki Kakushima, Hitoshi Wakabayashi, Hiroshi Iwai

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The dependence of ohmic contact resistance on the AlGaN layer thickness was evaluated for AlGaN/GaN high-electron-mobility transistor (HEMT) structures. Mo/Al/Ti contacts were formed on AlGaN layers with various thicknesses. The observed resistance characteristics are discussed on the basis of a model in which the overall contact resistance is composed of a series of three resistance components. Different dependences on the AlGaN layer thickness was observed after annealing at low temperatures (800-850 °C) and at high temperatures (900-950 °C). It was determined that lowering the resistance at the metal/AlGaN interface and that of the AlGaN layer is important for obtaining low-resistance ohmic contacts.

Original languageEnglish
Article number040306
JournalJapanese Journal of Applied Physics
Volume55
Issue number4
DOIs
Publication statusPublished - Apr 2016
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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