Dependence of ohmic contact properties on AlGaN layer thickness for AlGaN/GaN high-electron-mobility transistors

Yusuke Takei, Kazuo Tsutsui, Wataru Saito, Kuniyuki Kakushima, Hitoshi Wakabayashi, Hiroshi Iwai

Research output: Contribution to journalArticle

10 Citations (Scopus)

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Engineering & Materials Science

Physics & Astronomy