Dependence of Ti/C ratio on Ohmic contact with tic electrode for AlGaN/GaN structure

M. Okamoto, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, H. Iwai, W. Saito

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The dependency of Ti atom composition in Ti-C mixed electrodes on Ohmic characteristics for AlGaN/GaN structure is examined by elucidating the role of both Ti and C atoms. Owing to AlGaN surface reduction by reaction with C atoms with thermal treatment, an enhanced reaction of Ti atoms and AlGaN layer has been confirmed. The border of reactive layer and the remaining AlGaN layer has shown rather uniform interface, which is contrast to conventional metallic spike formation. Higher Ti atom composition has revealed lower Ohmic contact resistance, especially 2.6 Ωmm with Ti:C of 5:1. The proposed reaction mechanism gives a new guideline to achieve uniform electron conduction for lower contact resistance.

Original languageEnglish
Title of host publication2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages94-97
Number of pages4
ISBN (Electronic)9781479954933
DOIs
Publication statusPublished - Nov 20 2014
Externally publishedYes
Event2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014 - Knoxville, United States
Duration: Oct 13 2014Oct 15 2014

Publication series

Name2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014

Conference

Conference2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014
CountryUnited States
CityKnoxville
Period10/13/1410/15/14

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Computer Science Applications

Fingerprint Dive into the research topics of 'Dependence of Ti/C ratio on Ohmic contact with tic electrode for AlGaN/GaN structure'. Together they form a unique fingerprint.

  • Cite this

    Okamoto, M., Kakushima, K., Kataoka, Y., Nishiyama, A., Sugii, N., Wakabayashi, H., Tsutsui, K., Iwai, H., & Saito, W. (2014). Dependence of Ti/C ratio on Ohmic contact with tic electrode for AlGaN/GaN structure. In 2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014 (pp. 94-97). [6964631] (2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/WiPDA.2014.6964631