Dependences of effective work functions of TaN on HfO2 and SiO2 on post-metallization anneal

Youhei Sugimoto, Masanari Kajiwara, Keisuke Yamamoto, Yuusaku Suehiro, Dong Wang, Hiroshi Nakashima

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Abstract

We fabricated TaN-gate electrodes on HfO2 and SiO2 films by wet etching using NH4OH/H2O2 solution and investigated the electrical and structural properties of the TaN/SiO2 and TaN/HfO2 interfacial layers. The effective work function (Φm,eff) of TaN on SiO2 and HfO2 are 4.4 and 4.6 eV, respectively. The Φm,eff on SiO2 remained constant after post-metallization anneal (PMA) at temperatures of up to 750 °C and increased after 900 °C, but the Φm,eff on HfO2 increased after PMA at 750 °C. The analysis by X-ray photoelectron spectroscopy (XPS) indicated that Ta oxide was formed near the TaN/SiO2 and TaN/HfO2 interfacial layers after the annealing at 900 °C. It was concluded that the Φm,eff instability is strongly associated with the Ta-O bond formation at the interfaces.

Original languageEnglish
Pages (from-to)204-206
Number of pages3
JournalThin Solid Films
Volume517
Issue number1
DOIs
Publication statusPublished - Nov 3 2008

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Metallizing
Wet etching
Oxides
Structural properties
Electric properties
X ray photoelectron spectroscopy
electrical properties
etching
photoelectron spectroscopy
Annealing
Electrodes
annealing
electrodes
oxides
x rays
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Dependences of effective work functions of TaN on HfO2 and SiO2 on post-metallization anneal. / Sugimoto, Youhei; Kajiwara, Masanari; Yamamoto, Keisuke; Suehiro, Yuusaku; Wang, Dong; Nakashima, Hiroshi.

In: Thin Solid Films, Vol. 517, No. 1, 03.11.2008, p. 204-206.

Research output: Contribution to journalArticle

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abstract = "We fabricated TaN-gate electrodes on HfO2 and SiO2 films by wet etching using NH4OH/H2O2 solution and investigated the electrical and structural properties of the TaN/SiO2 and TaN/HfO2 interfacial layers. The effective work function (Φm,eff) of TaN on SiO2 and HfO2 are 4.4 and 4.6 eV, respectively. The Φm,eff on SiO2 remained constant after post-metallization anneal (PMA) at temperatures of up to 750 °C and increased after 900 °C, but the Φm,eff on HfO2 increased after PMA at 750 °C. The analysis by X-ray photoelectron spectroscopy (XPS) indicated that Ta oxide was formed near the TaN/SiO2 and TaN/HfO2 interfacial layers after the annealing at 900 °C. It was concluded that the Φm,eff instability is strongly associated with the Ta-O bond formation at the interfaces.",
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T1 - Dependences of effective work functions of TaN on HfO2 and SiO2 on post-metallization anneal

AU - Sugimoto, Youhei

AU - Kajiwara, Masanari

AU - Yamamoto, Keisuke

AU - Suehiro, Yuusaku

AU - Wang, Dong

AU - Nakashima, Hiroshi

PY - 2008/11/3

Y1 - 2008/11/3

N2 - We fabricated TaN-gate electrodes on HfO2 and SiO2 films by wet etching using NH4OH/H2O2 solution and investigated the electrical and structural properties of the TaN/SiO2 and TaN/HfO2 interfacial layers. The effective work function (Φm,eff) of TaN on SiO2 and HfO2 are 4.4 and 4.6 eV, respectively. The Φm,eff on SiO2 remained constant after post-metallization anneal (PMA) at temperatures of up to 750 °C and increased after 900 °C, but the Φm,eff on HfO2 increased after PMA at 750 °C. The analysis by X-ray photoelectron spectroscopy (XPS) indicated that Ta oxide was formed near the TaN/SiO2 and TaN/HfO2 interfacial layers after the annealing at 900 °C. It was concluded that the Φm,eff instability is strongly associated with the Ta-O bond formation at the interfaces.

AB - We fabricated TaN-gate electrodes on HfO2 and SiO2 films by wet etching using NH4OH/H2O2 solution and investigated the electrical and structural properties of the TaN/SiO2 and TaN/HfO2 interfacial layers. The effective work function (Φm,eff) of TaN on SiO2 and HfO2 are 4.4 and 4.6 eV, respectively. The Φm,eff on SiO2 remained constant after post-metallization anneal (PMA) at temperatures of up to 750 °C and increased after 900 °C, but the Φm,eff on HfO2 increased after PMA at 750 °C. The analysis by X-ray photoelectron spectroscopy (XPS) indicated that Ta oxide was formed near the TaN/SiO2 and TaN/HfO2 interfacial layers after the annealing at 900 °C. It was concluded that the Φm,eff instability is strongly associated with the Ta-O bond formation at the interfaces.

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