Dependency of arabidopsis thaliana growth on DC electric field intensity

Takamasa Okumura, Yuji Muramoto, Noriyuki Shimizu

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

In this paper, the dependency of Arabidopsis thaliana growth on dc field intensity was studied. One group of Arabidopsis thaliana seeds was cultivated under one intensity of electric field. Four values of 2.5, 5.0, 10.0 and 15.0 kV/m were chosen for applied field intensity. Applying duration was four days. Then, seed germination rate and stem length of seedling were obtained. As a result, it is shown that dc field improves seed germination rate and seedling stem length. Also, the length of seedling stem is increased with dc field up to 10.0 kV/m with comparatively high reliability by the statistical test, while above 10.0 kV/m it seems to saturate.

Original languageEnglish
Article number6783087
Pages (from-to)913-917
Number of pages5
JournalIEEE Transactions on Dielectrics and Electrical Insulation
Volume21
Issue number2
DOIs
Publication statusPublished - Apr 2014
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Dependency of arabidopsis thaliana growth on DC electric field intensity'. Together they form a unique fingerprint.

  • Cite this