Dependency of growth of Arabidopsis thaliana on intensity of D.C. electric field

Takamasa Okumura, Yuji Muramoto, Noriyuki Shimizu

Research output: Contribution to journalConference articlepeer-review

Abstract

We have studied the influence of electric field on plant growth. In previous papers, we reported that the D.C. electric field increases the seed germination rate, weight and length of daikon radish. We also obtain the similar effects for thale cress. It is reasonable to expect that there is an optimum intensity of D.C. electric field for plant growth improvement. As the first step to seek out the optimum intensity, the seeds of thale cress were cultivated under three circumstances; 0.0kV/m, 2.5kV/m, and 10.0kV/m of D.C. field. As a result, the growth is most increased by the 10.0kV/m; therefore, we estimated the optimum intensity to be higher than 2.5kV/m. In this paper, the detailed dependency of the growth of thale cress on the intensity of the D.C. electric field is studied.

Original languageEnglish
Article number6378769
Pages (from-to)255-258
Number of pages4
JournalAnnual Report - Conference on Electrical Insulation and Dielectric Phenomena, CEIDP
DOIs
Publication statusPublished - 2012
Externally publishedYes
Event2012 IEEE Conference on Electrical Insulation and Dielectric Phenomena, CEIDP 2012 - Montreal, QC, Canada
Duration: Oct 14 2012Oct 17 2012

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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