Deposition of a-Si: H films by ECR plasma CVD using large diameter multi-slot antennae

Yoko Ueda; Hideaki Teranishi; Masayoshi Tanaka; Shunjiro Shinohara; Yoshinobu Kawai

doi:10.1016/0257-8972(95)08253-0

Deposition of a-Si: H films by ECR plasma CVD using large diameter multi-slot antennae

Yoko Ueda, Hideaki Teranishi, Masayoshi Tanaka, Shunjiro Shinohara, Yoshinobu Kawai

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

A large diameter electron cyclotron resonance plasma was produced with a multi-slot antenna. The radial profile of the ion saturation current was examined as a function of input microwave power, gas pressure and magnetic mirror coil current to determine the experimental conditions necessary for a large diameter and uniform plasma at low pressure. Furthermore, the deposition of a-Si: H films was attempted onto 8 inch glass substrates using a gas mixture SiH₄-10% He.

Original language	English
Pages (from-to)	503-507
Number of pages	5
Journal	Surface and Coatings Technology
Volume	74-75
Issue number	PART 1
DOIs	https://doi.org/10.1016/0257-8972(95)08253-0
Publication status	Published - Sep 1995

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

Access to Document

10.1016/0257-8972(95)08253-0

Fingerprint Dive into the research topics of 'Deposition of a-Si: H films by ECR plasma CVD using large diameter multi-slot antennae'. Together they form a unique fingerprint.

Cite this

@article{e52bc1baabf44d40b9206090d3564ce0,

title = "Deposition of a-Si: H films by ECR plasma CVD using large diameter multi-slot antennae",

abstract = "A large diameter electron cyclotron resonance plasma was produced with a multi-slot antenna. The radial profile of the ion saturation current was examined as a function of input microwave power, gas pressure and magnetic mirror coil current to determine the experimental conditions necessary for a large diameter and uniform plasma at low pressure. Furthermore, the deposition of a-Si: H films was attempted onto 8 inch glass substrates using a gas mixture SiH4-10% He.",

author = "Yoko Ueda and Hideaki Teranishi and Masayoshi Tanaka and Shunjiro Shinohara and Yoshinobu Kawai",

year = "1995",

month = sep,

doi = "10.1016/0257-8972(95)08253-0",

language = "English",

volume = "74-75",

pages = "503--507",

journal = "Surface and Coatings Technology",

issn = "0257-8972",

publisher = "Elsevier",

number = "PART 1",

}

TY - JOUR

T1 - Deposition of a-Si

T2 - H films by ECR plasma CVD using large diameter multi-slot antennae

AU - Ueda, Yoko

AU - Teranishi, Hideaki

AU - Tanaka, Masayoshi

AU - Shinohara, Shunjiro

AU - Kawai, Yoshinobu

PY - 1995/9

Y1 - 1995/9

N2 - A large diameter electron cyclotron resonance plasma was produced with a multi-slot antenna. The radial profile of the ion saturation current was examined as a function of input microwave power, gas pressure and magnetic mirror coil current to determine the experimental conditions necessary for a large diameter and uniform plasma at low pressure. Furthermore, the deposition of a-Si: H films was attempted onto 8 inch glass substrates using a gas mixture SiH4-10% He.

AB - A large diameter electron cyclotron resonance plasma was produced with a multi-slot antenna. The radial profile of the ion saturation current was examined as a function of input microwave power, gas pressure and magnetic mirror coil current to determine the experimental conditions necessary for a large diameter and uniform plasma at low pressure. Furthermore, the deposition of a-Si: H films was attempted onto 8 inch glass substrates using a gas mixture SiH4-10% He.

UR - http://www.scopus.com/inward/record.url?scp=0029378468&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029378468&partnerID=8YFLogxK

U2 - 10.1016/0257-8972(95)08253-0

DO - 10.1016/0257-8972(95)08253-0

M3 - Article

AN - SCOPUS:0029378468

VL - 74-75

SP - 503

EP - 507

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

SN - 0257-8972

IS - PART 1

ER -