Deposition of a-Si: H films by ECR plasma CVD using large diameter multi-slot antennae

Yoko Ueda; Hideaki Teranishi; Masayoshi Tanaka; Shunjiro Shinohara; Yoshinobu Kawai

doi:10.1016/0257-8972(95)08253-0

Deposition of a-Si: H films by ECR plasma CVD using large diameter multi-slot antennae

Yoko Ueda, Hideaki Teranishi, Masayoshi Tanaka, Shunjiro Shinohara, Yoshinobu Kawai

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

A large diameter electron cyclotron resonance plasma was produced with a multi-slot antenna. The radial profile of the ion saturation current was examined as a function of input microwave power, gas pressure and magnetic mirror coil current to determine the experimental conditions necessary for a large diameter and uniform plasma at low pressure. Furthermore, the deposition of a-Si: H films was attempted onto 8 inch glass substrates using a gas mixture SiH₄-10% He.

Original language	English
Pages (from-to)	503-507
Number of pages	5
Journal	Surface and Coatings Technology
Volume	74-75
Issue number	PART 1
DOIs	https://doi.org/10.1016/0257-8972(95)08253-0
Publication status	Published - Sep 1995

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/0257-8972(95)08253-0

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abstract = "A large diameter electron cyclotron resonance plasma was produced with a multi-slot antenna. The radial profile of the ion saturation current was examined as a function of input microwave power, gas pressure and magnetic mirror coil current to determine the experimental conditions necessary for a large diameter and uniform plasma at low pressure. Furthermore, the deposition of a-Si: H films was attempted onto 8 inch glass substrates using a gas mixture SiH4-10% He.",

author = "Yoko Ueda and Hideaki Teranishi and Masayoshi Tanaka and Shunjiro Shinohara and Yoshinobu Kawai",

year = "1995",

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doi = "10.1016/0257-8972(95)08253-0",

language = "English",

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journal = "Surface and Coatings Technology",

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T1 - Deposition of a-Si

T2 - H films by ECR plasma CVD using large diameter multi-slot antennae

AU - Ueda, Yoko

AU - Teranishi, Hideaki

AU - Tanaka, Masayoshi

AU - Shinohara, Shunjiro

AU - Kawai, Yoshinobu

PY - 1995/9

Y1 - 1995/9

N2 - A large diameter electron cyclotron resonance plasma was produced with a multi-slot antenna. The radial profile of the ion saturation current was examined as a function of input microwave power, gas pressure and magnetic mirror coil current to determine the experimental conditions necessary for a large diameter and uniform plasma at low pressure. Furthermore, the deposition of a-Si: H films was attempted onto 8 inch glass substrates using a gas mixture SiH4-10% He.

AB - A large diameter electron cyclotron resonance plasma was produced with a multi-slot antenna. The radial profile of the ion saturation current was examined as a function of input microwave power, gas pressure and magnetic mirror coil current to determine the experimental conditions necessary for a large diameter and uniform plasma at low pressure. Furthermore, the deposition of a-Si: H films was attempted onto 8 inch glass substrates using a gas mixture SiH4-10% He.

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U2 - 10.1016/0257-8972(95)08253-0

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JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

SN - 0257-8972

IS - PART 1

ER -

Deposition of a-Si: H films by ECR plasma CVD using large diameter multi-slot antennae

Abstract

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