Deposition of amorphous CNx by d.c. and rf plasma sputtering using a rf radical nitrogen beam source

Y. Hayashi; M. M. Rahman; Kenji Kaneko; T. Soga; M. Umeno; T. Jimbo

doi:10.1016/S0925-9635(02)00013-4

Deposition of amorphous CN_x by d.c. and rf plasma sputtering using a rf radical nitrogen beam source

Y. Hayashi, M. M. Rahman, Kenji Kaneko, T. Soga, M. Umeno, T. Jimbo

Materials Processing

Research output: Contribution to journal › Article

1 Citation (Scopus)

Abstract

Amorphous CN_x thin films were deposited by d.c. and rf Ar plasma sputtering combined with a nitrogen rf radical beam source which supplies active nitrogen species to the growing film surface. The dependence modifications of the optical and the structural properties on nitrogen incorporation were investigated using ultraviolet-visible spectroscopy, X-ray photoelectron spectroscopy, a four-point-probe method and electron energy-loss spectroscopy. For the rf-sputtered films, the optical band gap was found to increase with the increase in the nitrogen content. For the d.c.-sputtered films, the optical gap first decreased to zero at low nitrogen content, and then increased with a further increase in the nitrogen content. C-K energy-loss near-edge structure (ELNES) showed a slight broadening on the lower energy side. The local environment of C and N atoms are almost similar as observed by comparing the C-K and N-K ELNESs.

Original language	English
Pages (from-to)	1178-1182
Number of pages	5
Journal	Diamond and Related Materials
Volume	11
Issue number	3-6
DOIs	https://doi.org/10.1016/S0925-9635(02)00013-4
Publication status	Published - Mar 1 2002

Fingerprint

Sputtering

Nitrogen

Plasmas

Electron energy loss spectroscopy

Ultraviolet visible spectroscopy

Optical band gaps

Amorphous films

Film growth

Structural properties

Energy dissipation

X ray photoelectron spectroscopy

Thin films

Atoms

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Chemistry(all)
Mechanical Engineering
Materials Chemistry
Electrical and Electronic Engineering

Cite this

Hayashi, Y., Rahman, M. M., Kaneko, K., Soga, T., Umeno, M., & Jimbo, T. (2002). Deposition of amorphous CN_x by d.c. and rf plasma sputtering using a rf radical nitrogen beam source. Diamond and Related Materials, 11(3-6), 1178-1182. https://doi.org/10.1016/S0925-9635(02)00013-4

Deposition of amorphous CN_x by d.c. and rf plasma sputtering using a rf radical nitrogen beam source. / Hayashi, Y.; Rahman, M. M.; Kaneko, Kenji; Soga, T.; Umeno, M.; Jimbo, T.

In: Diamond and Related Materials, Vol. 11, No. 3-6, 01.03.2002, p. 1178-1182.

Research output: Contribution to journal › Article

Hayashi, Y, Rahman, MM, Kaneko, K, Soga, T, Umeno, M & Jimbo, T 2002, 'Deposition of amorphous CN_x by d.c. and rf plasma sputtering using a rf radical nitrogen beam source', Diamond and Related Materials, vol. 11, no. 3-6, pp. 1178-1182. https://doi.org/10.1016/S0925-9635(02)00013-4

Hayashi Y, Rahman MM, Kaneko K, Soga T, Umeno M, Jimbo T. Deposition of amorphous CN_x by d.c. and rf plasma sputtering using a rf radical nitrogen beam source. Diamond and Related Materials. 2002 Mar 1;11(3-6):1178-1182. https://doi.org/10.1016/S0925-9635(02)00013-4

Hayashi, Y. ; Rahman, M. M. ; Kaneko, Kenji ; Soga, T. ; Umeno, M. ; Jimbo, T. / Deposition of amorphous CN_x by d.c. and rf plasma sputtering using a rf radical nitrogen beam source. In: Diamond and Related Materials. 2002 ; Vol. 11, No. 3-6. pp. 1178-1182.

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10.1016/S0925-9635(02)00013-4