Deposition of cluster-free P-doped A-Si:H films using a multi-hollow discharge plasma CVD method

Kenta Nakahara, Yuki Kawashima, Muneharu Sato, Takeaki Matsunaga, Kousuke Yamamoto, William Makoto Nakamura, Daisuke Yamashita, Hidefumi Matsuzaki, Giichiro Uchida, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We have deposited cluster-free P-doped a-Si:H films using SiH 4+PH3 multi-hollow discharge plasma CVD method. We have measured dependence of a deposition rate and SiH emission intensity on a gas flow rate ratio R=[PH3]/[SiH4]. The increase of deposition rate with R is much larger than that of SiH emission intensity. These results suggest PHx radicals enhance surface reaction probability of SiH 3 radicals. The P concentration in the films can be controlled by the gas flow rate ratio for R<5%. We have succeeded in depositing P-doped a-Si:H films of a low stabilized defect density of 2.9×1015 cm -3. The conductivity of the films is lower than that of the conventional films. Other optoelectronic properties such as conductivity, its activation energy, and bandgap energy are value ranges of the conventional films.

Original languageEnglish
Title of host publicationProgram - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Pages3722-3725
Number of pages4
DOIs
Publication statusPublished - Dec 20 2010
Event35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States
Duration: Jun 20 2010Jun 25 2010

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other35th IEEE Photovoltaic Specialists Conference, PVSC 2010
CountryUnited States
CityHonolulu, HI
Period6/20/106/25/10

Fingerprint

Plasma CVD
Deposition rates
Flow of gases
Flow rate
Defect density
Surface reactions
Optoelectronic devices
Energy gap
Activation energy

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Cite this

Nakahara, K., Kawashima, Y., Sato, M., Matsunaga, T., Yamamoto, K., Nakamura, W. M., ... Shiratani, M. (2010). Deposition of cluster-free P-doped A-Si:H films using a multi-hollow discharge plasma CVD method. In Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010 (pp. 3722-3725). [5616514] (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2010.5616514

Deposition of cluster-free P-doped A-Si:H films using a multi-hollow discharge plasma CVD method. / Nakahara, Kenta; Kawashima, Yuki; Sato, Muneharu; Matsunaga, Takeaki; Yamamoto, Kousuke; Nakamura, William Makoto; Yamashita, Daisuke; Matsuzaki, Hidefumi; Uchida, Giichiro; Kamataki, Kunihiro; Itagaki, Naho; Koga, Kazunori; Shiratani, Masaharu.

Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010. 2010. p. 3722-3725 5616514 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nakahara, K, Kawashima, Y, Sato, M, Matsunaga, T, Yamamoto, K, Nakamura, WM, Yamashita, D, Matsuzaki, H, Uchida, G, Kamataki, K, Itagaki, N, Koga, K & Shiratani, M 2010, Deposition of cluster-free P-doped A-Si:H films using a multi-hollow discharge plasma CVD method. in Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010., 5616514, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 3722-3725, 35th IEEE Photovoltaic Specialists Conference, PVSC 2010, Honolulu, HI, United States, 6/20/10. https://doi.org/10.1109/PVSC.2010.5616514
Nakahara K, Kawashima Y, Sato M, Matsunaga T, Yamamoto K, Nakamura WM et al. Deposition of cluster-free P-doped A-Si:H films using a multi-hollow discharge plasma CVD method. In Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010. 2010. p. 3722-3725. 5616514. (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2010.5616514
Nakahara, Kenta ; Kawashima, Yuki ; Sato, Muneharu ; Matsunaga, Takeaki ; Yamamoto, Kousuke ; Nakamura, William Makoto ; Yamashita, Daisuke ; Matsuzaki, Hidefumi ; Uchida, Giichiro ; Kamataki, Kunihiro ; Itagaki, Naho ; Koga, Kazunori ; Shiratani, Masaharu. / Deposition of cluster-free P-doped A-Si:H films using a multi-hollow discharge plasma CVD method. Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010. 2010. pp. 3722-3725 (Conference Record of the IEEE Photovoltaic Specialists Conference).
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AU - Yamamoto, Kousuke

AU - Nakamura, William Makoto

AU - Yamashita, Daisuke

AU - Matsuzaki, Hidefumi

AU - Uchida, Giichiro

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AU - Koga, Kazunori

AU - Shiratani, Masaharu

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