We have deposited cluster-free P-doped a-Si:H films using SiH 4+PH3 multi-hollow discharge plasma CVD method. We have measured dependence of a deposition rate and SiH emission intensity on a gas flow rate ratio R=[PH3]/[SiH4]. The increase of deposition rate with R is much larger than that of SiH emission intensity. These results suggest PHx radicals enhance surface reaction probability of SiH 3 radicals. The P concentration in the films can be controlled by the gas flow rate ratio for R<5%. We have succeeded in depositing P-doped a-Si:H films of a low stabilized defect density of 2.9×1015 cm -3. The conductivity of the films is lower than that of the conventional films. Other optoelectronic properties such as conductivity, its activation energy, and bandgap energy are value ranges of the conventional films.