Deposition of cluster-free P-doped a-Si:H films using SiH4+PH3 multi-hollow discharge plasma CVD

Kazunori Koga, Kenta Nakahara, Yeon Won Kim, Yuki Kawashima, Takeaki Matsunaga, Muneharu Sato, Daisuke Yamashita, Hidefumi Matsuzaki, Giichiro Uchida, Kunihiro Kamataki, Naho Itagaki, Masaharu Shiratani

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Abstract

We deposited cluster-free P-doped a-Si:H films using a SiH4+PH3 multi-hollow discharge plasma CVD method. The deposition rate sharply increased from 0.49 nm/s with an increasing gas flow rate ratio R = [PH3]/[SiH4] from 0% to 1.17 nm/s at R = 1.0%, then slightly increased to 1.27 nm/s for R = 10%. SiH* emission intensity monotonically increased with increasing R. The increase in deposition rate with increasing R was much higher than that of the SiHx generation rate. The surface reaction probability β of SiH3 increased from 0.33 for R = 0% to 0.62 for R = 0.6%, then remained nearly constant for R > 0.6%. The sticking probability s of SiH3 increased from 0.1 for R = 0% to 0.162 for R = 0.6%, then slightly increased to 0.181 for R = 10%. These results suggest that PHx radicals enhance the surface reaction probability and surface sticking probability of SiH3 radicals. We successfully deposited P-doped a-Si:H films with a low stabilized defect density of 2.9 × 1015 cm-3. This defect density is much lower than that of conventional doped a-Si:H films.

Original languageEnglish
Pages (from-to)3013-3016
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume8
Issue number10
DOIs
Publication statusPublished - Oct 1 2011

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plasma jets
hollow
vapor deposition
surface reactions
defects
gas flow
flow velocity

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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Deposition of cluster-free P-doped a-Si:H films using SiH4+PH3 multi-hollow discharge plasma CVD. / Koga, Kazunori; Nakahara, Kenta; Kim, Yeon Won; Kawashima, Yuki; Matsunaga, Takeaki; Sato, Muneharu; Yamashita, Daisuke; Matsuzaki, Hidefumi; Uchida, Giichiro; Kamataki, Kunihiro; Itagaki, Naho; Shiratani, Masaharu.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 8, No. 10, 01.10.2011, p. 3013-3016.

Research output: Contribution to journalArticle

Koga, Kazunori ; Nakahara, Kenta ; Kim, Yeon Won ; Kawashima, Yuki ; Matsunaga, Takeaki ; Sato, Muneharu ; Yamashita, Daisuke ; Matsuzaki, Hidefumi ; Uchida, Giichiro ; Kamataki, Kunihiro ; Itagaki, Naho ; Shiratani, Masaharu. / Deposition of cluster-free P-doped a-Si:H films using SiH4+PH3 multi-hollow discharge plasma CVD. In: Physica Status Solidi (C) Current Topics in Solid State Physics. 2011 ; Vol. 8, No. 10. pp. 3013-3016.
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AU - Sato, Muneharu

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