Deposition of cluster-free P-doped a-Si:H films using SiH4+PH3 multi-hollow discharge plasma CVD

Kazunori Koga, Kenta Nakahara, Yeon Won Kim, Yuki Kawashima, Takeaki Matsunaga, Muneharu Sato, Daisuke Yamashita, Hidefumi Matsuzaki, Giichiro Uchida, Kunihiro Kamataki, Naho Itagaki, Masaharu Shiratani

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We deposited cluster-free P-doped a-Si:H films using a SiH4+PH3 multi-hollow discharge plasma CVD method. The deposition rate sharply increased from 0.49 nm/s with an increasing gas flow rate ratio R = [PH3]/[SiH4] from 0% to 1.17 nm/s at R = 1.0%, then slightly increased to 1.27 nm/s for R = 10%. SiH* emission intensity monotonically increased with increasing R. The increase in deposition rate with increasing R was much higher than that of the SiHx generation rate. The surface reaction probability β of SiH3 increased from 0.33 for R = 0% to 0.62 for R = 0.6%, then remained nearly constant for R > 0.6%. The sticking probability s of SiH3 increased from 0.1 for R = 0% to 0.162 for R = 0.6%, then slightly increased to 0.181 for R = 10%. These results suggest that PHx radicals enhance the surface reaction probability and surface sticking probability of SiH3 radicals. We successfully deposited P-doped a-Si:H films with a low stabilized defect density of 2.9 × 1015 cm-3. This defect density is much lower than that of conventional doped a-Si:H films.

Original languageEnglish
Pages (from-to)3013-3016
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume8
Issue number10
DOIs
Publication statusPublished - Oct 1 2011

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Deposition of cluster-free P-doped a-Si:H films using SiH<sub>4</sub>+PH<sub>3</sub> multi-hollow discharge plasma CVD'. Together they form a unique fingerprint.

  • Cite this