Deposition of crystalline Ge nanoparticle films by high-pressure RF magnetron sputtering method

D. Ichida, G. Uchida, Hyunwoong Seo, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

We report here deposition of crystalline Ge nanoparticle films using a radio frequency magnetron sputtering method in argon and hydrogen gas mixture under a high pressure condition. The size of Ge nanoparticles is deduced to be 6.3-6.4 nm from the peak frequency shift of Raman spectra. Raman and X-ray diffraction spectra show that the films are crystalline. The film crystallinity strongly depends on substrate temperature (Ts). Highly crystalline Ge nanoparticle films are successfully fabricated at Ts 180°C.

Original languageEnglish
Article number012002
JournalJournal of Physics: Conference Series
Volume518
Issue number1
DOIs
Publication statusPublished - Jan 1 2014
Event26th Symposium on Plasma Sciences for Materials, SPSM 2013 - Fukuoka, Japan
Duration: Sep 23 2013Sep 24 2013

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magnetron sputtering
nanoparticles
frequency shift
gas mixtures
crystallinity
radio frequencies
argon
Raman spectra
hydrogen
diffraction
x rays
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Deposition of crystalline Ge nanoparticle films by high-pressure RF magnetron sputtering method. / Ichida, D.; Uchida, G.; Seo, Hyunwoong; Kamataki, Kunihiro; Itagaki, Naho; Koga, Kazunori; Shiratani, Masaharu.

In: Journal of Physics: Conference Series, Vol. 518, No. 1, 012002, 01.01.2014.

Research output: Contribution to journalConference article

@article{3b5239a5615d40c0a441e08c86c783c9,
title = "Deposition of crystalline Ge nanoparticle films by high-pressure RF magnetron sputtering method",
abstract = "We report here deposition of crystalline Ge nanoparticle films using a radio frequency magnetron sputtering method in argon and hydrogen gas mixture under a high pressure condition. The size of Ge nanoparticles is deduced to be 6.3-6.4 nm from the peak frequency shift of Raman spectra. Raman and X-ray diffraction spectra show that the films are crystalline. The film crystallinity strongly depends on substrate temperature (Ts). Highly crystalline Ge nanoparticle films are successfully fabricated at Ts 180°C.",
author = "D. Ichida and G. Uchida and Hyunwoong Seo and Kunihiro Kamataki and Naho Itagaki and Kazunori Koga and Masaharu Shiratani",
year = "2014",
month = "1",
day = "1",
doi = "10.1088/1742-6596/518/1/012002",
language = "English",
volume = "518",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",

}

TY - JOUR

T1 - Deposition of crystalline Ge nanoparticle films by high-pressure RF magnetron sputtering method

AU - Ichida, D.

AU - Uchida, G.

AU - Seo, Hyunwoong

AU - Kamataki, Kunihiro

AU - Itagaki, Naho

AU - Koga, Kazunori

AU - Shiratani, Masaharu

PY - 2014/1/1

Y1 - 2014/1/1

N2 - We report here deposition of crystalline Ge nanoparticle films using a radio frequency magnetron sputtering method in argon and hydrogen gas mixture under a high pressure condition. The size of Ge nanoparticles is deduced to be 6.3-6.4 nm from the peak frequency shift of Raman spectra. Raman and X-ray diffraction spectra show that the films are crystalline. The film crystallinity strongly depends on substrate temperature (Ts). Highly crystalline Ge nanoparticle films are successfully fabricated at Ts 180°C.

AB - We report here deposition of crystalline Ge nanoparticle films using a radio frequency magnetron sputtering method in argon and hydrogen gas mixture under a high pressure condition. The size of Ge nanoparticles is deduced to be 6.3-6.4 nm from the peak frequency shift of Raman spectra. Raman and X-ray diffraction spectra show that the films are crystalline. The film crystallinity strongly depends on substrate temperature (Ts). Highly crystalline Ge nanoparticle films are successfully fabricated at Ts 180°C.

UR - http://www.scopus.com/inward/record.url?scp=84903471907&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84903471907&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/518/1/012002

DO - 10.1088/1742-6596/518/1/012002

M3 - Conference article

VL - 518

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012002

ER -