Deposition of high-quality silicon oxynitride film at low temperature by using a sputtering-type electron cyclotron resonance plasma

Da Wei Gao, Yasuhiro Kashiwazaki, Katsunori Muraoka, Hiroshi Nakashima, Katsuhiko Furukawa, Yi Chun Liu, Toshio Tsurushima

    Research output: Contribution to journalArticle

    2 Citations (Scopus)

    Abstract

    Si oxynitride dielectric films having good electrical and structural characteristics were deposited at 130°C by a sputtering technique using an electron cyclotron resonance plasma. This was demonstrated by studying breakdown characteristics, chemical etch rate, refractive index, and chemical bonding characteristics as a function of the flow rate ratio of O2 to N2. At the optimum condition, the oxynitride films had refractive indexes in the range 1.5-1.6 and infra-red peak positions in the range 955-1035 cm-1, and showed a high breakdown field of 12-13 MV/cm. It was found that the breakdown field and charge trapping of the oxynitride films were superior to those of thermally grown oxide. These improvements are interpreted as being due to a suitable N-atom incorporation into the films during the deposition process, enabling the formation of a partial O-Si-N amorphous network.

    Original languageEnglish
    Pages (from-to)L1692-L1694
    JournalJapanese Journal of Applied Physics, Part 2: Letters
    Volume36
    Issue number12 B
    DOIs
    Publication statusPublished - 1997

    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy (miscellaneous)
    • Physics and Astronomy(all)

    Fingerprint Dive into the research topics of 'Deposition of high-quality silicon oxynitride film at low temperature by using a sputtering-type electron cyclotron resonance plasma'. Together they form a unique fingerprint.

    Cite this