Deposition of smooth thin Cu films in deep submicron trench by plasma CVD reactor with H atom source

M. Shiratani, Jie Jin Hong Jie Jin, Y. Nakatake, K. Koga, T. Kinoshita, Y. Watanabe

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Abstract

Effects of H irradiation on purifying Cu films and improving their surface roughness as well as size and orientation of Cu grains in the films have been examined using a newly developed plasma CVD reactor equipped with an H atom source, in which Cu(hfac)2 is supplied as the source material. The H irradiation is effective in purifying the Cu films, increasing the grain size, and reducing the surface roughness, while it has no effect on the grain orientation. The decrease in dissociation degree of material gas leads to reduction of the surface reaction probability of Cu-containing radicals, which is important to realize conformal deposition in fine trenches. Using the control of dissociation degree of material gas independent of H irradiation, we have demonstrated conformal deposition of smooth Cu films in the trench using the developed plasma CVD reactor.

Original languageEnglish
Pages (from-to)D921-D926
JournalMaterials Research Society Symposium - Proceedings
Volume612
Publication statusPublished - Dec 1 2000
EventMaterials, Technology and Reliability for Advanced Interconnetcs and Low-K Dielectrics - San Francisco, CA, United States
Duration: Apr 23 2000Apr 27 2000

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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