Deposition profile control of carbon films on patterned substrates using a hydrogen-assisted plasma CVD method

Takuya Nomura, Kazunori Koga, Masaharu Shiratani, Yuichi Setsuhara, Makoto Sekine, Masaru Hori

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We have studied effects of H atom source on deposition profiles of carbon films, deposited by H assisted anisotropic plasma CVD method. Deposition rate normalized by that for the aspect ratio of 1 at sidewall and bottom decreases with increasing discharge power of H atom source from 0 W to 500 W, because the incident H atom flux per surface area in a trench increases and H atoms etch carbon films.

Original languageEnglish
Title of host publicationMicroelectromechanical Systems - Materials and Devices III
Pages203-207
Number of pages5
Publication statusPublished - Aug 30 2010
Event2009 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 29 2009Dec 3 2009

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1222
ISSN (Print)0272-9172

Conference

Conference2009 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/29/0912/3/09

Fingerprint

Plasma CVD
Carbon films
Hydrogen
vapor deposition
Atoms
carbon
Substrates
hydrogen
profiles
atoms
Deposition rates
aspect ratio
Aspect ratio
Fluxes

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Nomura, T., Koga, K., Shiratani, M., Setsuhara, Y., Sekine, M., & Hori, M. (2010). Deposition profile control of carbon films on patterned substrates using a hydrogen-assisted plasma CVD method. In Microelectromechanical Systems - Materials and Devices III (pp. 203-207). (Materials Research Society Symposium Proceedings; Vol. 1222).

Deposition profile control of carbon films on patterned substrates using a hydrogen-assisted plasma CVD method. / Nomura, Takuya; Koga, Kazunori; Shiratani, Masaharu; Setsuhara, Yuichi; Sekine, Makoto; Hori, Masaru.

Microelectromechanical Systems - Materials and Devices III. 2010. p. 203-207 (Materials Research Society Symposium Proceedings; Vol. 1222).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nomura, T, Koga, K, Shiratani, M, Setsuhara, Y, Sekine, M & Hori, M 2010, Deposition profile control of carbon films on patterned substrates using a hydrogen-assisted plasma CVD method. in Microelectromechanical Systems - Materials and Devices III. Materials Research Society Symposium Proceedings, vol. 1222, pp. 203-207, 2009 MRS Fall Meeting, Boston, MA, United States, 11/29/09.
Nomura T, Koga K, Shiratani M, Setsuhara Y, Sekine M, Hori M. Deposition profile control of carbon films on patterned substrates using a hydrogen-assisted plasma CVD method. In Microelectromechanical Systems - Materials and Devices III. 2010. p. 203-207. (Materials Research Society Symposium Proceedings).
Nomura, Takuya ; Koga, Kazunori ; Shiratani, Masaharu ; Setsuhara, Yuichi ; Sekine, Makoto ; Hori, Masaru. / Deposition profile control of carbon films on patterned substrates using a hydrogen-assisted plasma CVD method. Microelectromechanical Systems - Materials and Devices III. 2010. pp. 203-207 (Materials Research Society Symposium Proceedings).
@inproceedings{ee0f71b182ac452497b6e5003d3f2175,
title = "Deposition profile control of carbon films on patterned substrates using a hydrogen-assisted plasma CVD method",
abstract = "We have studied effects of H atom source on deposition profiles of carbon films, deposited by H assisted anisotropic plasma CVD method. Deposition rate normalized by that for the aspect ratio of 1 at sidewall and bottom decreases with increasing discharge power of H atom source from 0 W to 500 W, because the incident H atom flux per surface area in a trench increases and H atoms etch carbon films.",
author = "Takuya Nomura and Kazunori Koga and Masaharu Shiratani and Yuichi Setsuhara and Makoto Sekine and Masaru Hori",
year = "2010",
month = "8",
day = "30",
language = "English",
isbn = "9781605111957",
series = "Materials Research Society Symposium Proceedings",
pages = "203--207",
booktitle = "Microelectromechanical Systems - Materials and Devices III",

}

TY - GEN

T1 - Deposition profile control of carbon films on patterned substrates using a hydrogen-assisted plasma CVD method

AU - Nomura, Takuya

AU - Koga, Kazunori

AU - Shiratani, Masaharu

AU - Setsuhara, Yuichi

AU - Sekine, Makoto

AU - Hori, Masaru

PY - 2010/8/30

Y1 - 2010/8/30

N2 - We have studied effects of H atom source on deposition profiles of carbon films, deposited by H assisted anisotropic plasma CVD method. Deposition rate normalized by that for the aspect ratio of 1 at sidewall and bottom decreases with increasing discharge power of H atom source from 0 W to 500 W, because the incident H atom flux per surface area in a trench increases and H atoms etch carbon films.

AB - We have studied effects of H atom source on deposition profiles of carbon films, deposited by H assisted anisotropic plasma CVD method. Deposition rate normalized by that for the aspect ratio of 1 at sidewall and bottom decreases with increasing discharge power of H atom source from 0 W to 500 W, because the incident H atom flux per surface area in a trench increases and H atoms etch carbon films.

UR - http://www.scopus.com/inward/record.url?scp=77955955307&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77955955307&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:77955955307

SN - 9781605111957

T3 - Materials Research Society Symposium Proceedings

SP - 203

EP - 207

BT - Microelectromechanical Systems - Materials and Devices III

ER -