Deposition profile control of carbon films on patterned substrates using a hydrogen-assisted plasma CVD method

Takuya Nomura, Kazunori Koga, Masaharu Shiratani, Yuichi Setsuhara, Makoto Sekine, Masaru Hori

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We have studied effects of H atom source on deposition profiles of carbon films, deposited by H assisted anisotropic plasma CVD method. Deposition rate normalized by that for the aspect ratio of 1 at sidewall and bottom decreases with increasing discharge power of H atom source from 0 W to 500 W, because the incident H atom flux per surface area in a trench increases and H atoms etch carbon films.

Original languageEnglish
Title of host publicationMicroelectromechanical Systems - Materials and Devices III
Pages203-207
Number of pages5
Publication statusPublished - 2010
Event2009 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 30 2009Dec 2 2009

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1222
ISSN (Print)0272-9172

Other

Other2009 MRS Fall Meeting
Country/TerritoryUnited States
CityBoston, MA
Period11/30/0912/2/09

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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