Deposition profiles of microcrystalline silicon films using multi-hollow discharge plasma CVD

Takeaki Matsunaga, Yuki Kawashima, Kazunori Koga, Kenta Nakahara, William Makoto Nakamura, Giichiro Uchida, Naho Itagaki, Daisuke Yamashita, Hidefumi Matsuzaki, Masaharu Shiratani

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have studied deposition profiles of micro crystalline silicon (μc-Si) films using a multi-hollow discharge plasma CVD method, by which contribution of SiH3 and H to deposition varies with the distance between the substrate and discharge region. Under high pressure (6 Torr) depletion condition, crystalline films were deposited in a region near the discharges and the higher crystallinity was obtained at the closer to the discharges. Films of 0.6 in crystallinity ΦC were deposited in a very narrow region between 4 and 5 mm from the discharges. The process window of good quality μc-Si films is very narrow. These results indicate the multi-hollow discharge plasma CVD method allows us to optimize deposition conditions easier than the conventional deposition methods.

Original languageEnglish
Title of host publicationTENCON 2010 - 2010 IEEE Region 10 Conference
Pages2219-2221
Number of pages3
DOIs
Publication statusPublished - Dec 1 2010
Event2010 IEEE Region 10 Conference, TENCON 2010 - Fukuoka, Japan
Duration: Nov 21 2010Nov 24 2010

Publication series

NameIEEE Region 10 Annual International Conference, Proceedings/TENCON

Other

Other2010 IEEE Region 10 Conference, TENCON 2010
CountryJapan
CityFukuoka
Period11/21/1011/24/10

Fingerprint

Plasma CVD
Microcrystalline silicon
Crystalline materials
Silicon
Substrates

All Science Journal Classification (ASJC) codes

  • Computer Science Applications
  • Electrical and Electronic Engineering

Cite this

Matsunaga, T., Kawashima, Y., Koga, K., Nakahara, K., Nakamura, W. M., Uchida, G., ... Shiratani, M. (2010). Deposition profiles of microcrystalline silicon films using multi-hollow discharge plasma CVD. In TENCON 2010 - 2010 IEEE Region 10 Conference (pp. 2219-2221). [5686679] (IEEE Region 10 Annual International Conference, Proceedings/TENCON). https://doi.org/10.1109/TENCON.2010.5686679

Deposition profiles of microcrystalline silicon films using multi-hollow discharge plasma CVD. / Matsunaga, Takeaki; Kawashima, Yuki; Koga, Kazunori; Nakahara, Kenta; Nakamura, William Makoto; Uchida, Giichiro; Itagaki, Naho; Yamashita, Daisuke; Matsuzaki, Hidefumi; Shiratani, Masaharu.

TENCON 2010 - 2010 IEEE Region 10 Conference. 2010. p. 2219-2221 5686679 (IEEE Region 10 Annual International Conference, Proceedings/TENCON).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Matsunaga, T, Kawashima, Y, Koga, K, Nakahara, K, Nakamura, WM, Uchida, G, Itagaki, N, Yamashita, D, Matsuzaki, H & Shiratani, M 2010, Deposition profiles of microcrystalline silicon films using multi-hollow discharge plasma CVD. in TENCON 2010 - 2010 IEEE Region 10 Conference., 5686679, IEEE Region 10 Annual International Conference, Proceedings/TENCON, pp. 2219-2221, 2010 IEEE Region 10 Conference, TENCON 2010, Fukuoka, Japan, 11/21/10. https://doi.org/10.1109/TENCON.2010.5686679
Matsunaga T, Kawashima Y, Koga K, Nakahara K, Nakamura WM, Uchida G et al. Deposition profiles of microcrystalline silicon films using multi-hollow discharge plasma CVD. In TENCON 2010 - 2010 IEEE Region 10 Conference. 2010. p. 2219-2221. 5686679. (IEEE Region 10 Annual International Conference, Proceedings/TENCON). https://doi.org/10.1109/TENCON.2010.5686679
Matsunaga, Takeaki ; Kawashima, Yuki ; Koga, Kazunori ; Nakahara, Kenta ; Nakamura, William Makoto ; Uchida, Giichiro ; Itagaki, Naho ; Yamashita, Daisuke ; Matsuzaki, Hidefumi ; Shiratani, Masaharu. / Deposition profiles of microcrystalline silicon films using multi-hollow discharge plasma CVD. TENCON 2010 - 2010 IEEE Region 10 Conference. 2010. pp. 2219-2221 (IEEE Region 10 Annual International Conference, Proceedings/TENCON).
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AU - Uchida, Giichiro

AU - Itagaki, Naho

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AU - Matsuzaki, Hidefumi

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