We investigated the magneto-conductivity Δ in three dimensional indium zinc oxide films with different resistivity ρ prepared by postannealing in air. The weak localization theory was fitted to data of Δ H) at temperatures below 50K by the use of suitable inelastic scattering time τi(T) and spin-orbit(S-O) scattering time τi. We found the ρ dependences of both times τ and τi in a range 1.5 × 10-3Ω < ρ 300K) <4 × 10 -6Ω. As ρ increases, the ratio τi/τ increases from ≈ .005 to ≈ .5 and the Δ - at low temperatures changes from positive to negative values. We suggest a picture that the annealing in air brings the change of the S-O scattering from light to heavy atoms, namely, oxygen to indium and/or zinc atoms.
|Journal||Journal of Physics: Conference Series|
|Issue number||PART 4|
|Publication status||Published - 2012|
|Event||26th International Conference on Low Temperature Physics, LT 2011 - Beijing, China|
Duration: Aug 10 2011 → Aug 17 2011
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)