Depth profile analyses of implanted deuterium in tungsten by secondary ion mass spectrometry

Kazutoshi Tokunaga, M. Takayama, T. Muroga, N. Yoshida

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

In order to establish the method of analyses of implanted hydrogen isotopes by secondary ion mass spectrometry (SIMS) and to understand the accumulation process of hydrogen in plasma-facing materials, the depth profile of implanted deuterium in tungsten has been examined by SIMS. Introduction of oxygen on the specimen surface made it possible to analyze the depth profile in the near surface region. The deuterium distribution was found to depend on both the incident energy and fluence. Implanted deuterium was expected to be trapped by radiation defects of vacancy type after migration at room temperature. These results imply that the radiation damage by irradiation with hydrogen isotopes from plasma in fusion devices enhances the hydrogen isotope retention in the near surface regions.

Original languageEnglish
Pages (from-to)800-804
Number of pages5
JournalJournal of Nuclear Materials
Volume220-222
DOIs
Publication statusPublished - Jan 1 1995

Fingerprint

Tungsten
hydrogen isotopes
Deuterium
Secondary ion mass spectrometry
secondary ion mass spectrometry
deuterium
Hydrogen
tungsten
Isotopes
profiles
Plasmas
radiation damage
Facings
Radiation damage
fluence
fusion
Vacancies
irradiation
Fusion reactions
defects

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Materials Science(all)

Cite this

Depth profile analyses of implanted deuterium in tungsten by secondary ion mass spectrometry. / Tokunaga, Kazutoshi; Takayama, M.; Muroga, T.; Yoshida, N.

In: Journal of Nuclear Materials, Vol. 220-222, 01.01.1995, p. 800-804.

Research output: Contribution to journalArticle

@article{afd80f6967dd452db02ef75c7e7c0f19,
title = "Depth profile analyses of implanted deuterium in tungsten by secondary ion mass spectrometry",
abstract = "In order to establish the method of analyses of implanted hydrogen isotopes by secondary ion mass spectrometry (SIMS) and to understand the accumulation process of hydrogen in plasma-facing materials, the depth profile of implanted deuterium in tungsten has been examined by SIMS. Introduction of oxygen on the specimen surface made it possible to analyze the depth profile in the near surface region. The deuterium distribution was found to depend on both the incident energy and fluence. Implanted deuterium was expected to be trapped by radiation defects of vacancy type after migration at room temperature. These results imply that the radiation damage by irradiation with hydrogen isotopes from plasma in fusion devices enhances the hydrogen isotope retention in the near surface regions.",
author = "Kazutoshi Tokunaga and M. Takayama and T. Muroga and N. Yoshida",
year = "1995",
month = "1",
day = "1",
doi = "10.1016/0022-3115(94)00588-5",
language = "English",
volume = "220-222",
pages = "800--804",
journal = "Journal of Nuclear Materials",
issn = "0022-3115",
publisher = "Elsevier",

}

TY - JOUR

T1 - Depth profile analyses of implanted deuterium in tungsten by secondary ion mass spectrometry

AU - Tokunaga, Kazutoshi

AU - Takayama, M.

AU - Muroga, T.

AU - Yoshida, N.

PY - 1995/1/1

Y1 - 1995/1/1

N2 - In order to establish the method of analyses of implanted hydrogen isotopes by secondary ion mass spectrometry (SIMS) and to understand the accumulation process of hydrogen in plasma-facing materials, the depth profile of implanted deuterium in tungsten has been examined by SIMS. Introduction of oxygen on the specimen surface made it possible to analyze the depth profile in the near surface region. The deuterium distribution was found to depend on both the incident energy and fluence. Implanted deuterium was expected to be trapped by radiation defects of vacancy type after migration at room temperature. These results imply that the radiation damage by irradiation with hydrogen isotopes from plasma in fusion devices enhances the hydrogen isotope retention in the near surface regions.

AB - In order to establish the method of analyses of implanted hydrogen isotopes by secondary ion mass spectrometry (SIMS) and to understand the accumulation process of hydrogen in plasma-facing materials, the depth profile of implanted deuterium in tungsten has been examined by SIMS. Introduction of oxygen on the specimen surface made it possible to analyze the depth profile in the near surface region. The deuterium distribution was found to depend on both the incident energy and fluence. Implanted deuterium was expected to be trapped by radiation defects of vacancy type after migration at room temperature. These results imply that the radiation damage by irradiation with hydrogen isotopes from plasma in fusion devices enhances the hydrogen isotope retention in the near surface regions.

UR - http://www.scopus.com/inward/record.url?scp=0003250647&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0003250647&partnerID=8YFLogxK

U2 - 10.1016/0022-3115(94)00588-5

DO - 10.1016/0022-3115(94)00588-5

M3 - Article

VL - 220-222

SP - 800

EP - 804

JO - Journal of Nuclear Materials

JF - Journal of Nuclear Materials

SN - 0022-3115

ER -