Depth-profiling analysis of MOCVD-grown triple junction solar cells by SIMS

Helena Téllez, José M. Vadillo, Egbert Rodríguez Messmer, Javier Miguel-Sánchez, J. Javier Laserna

    Research output: Contribution to journalArticlepeer-review

    1 Citation (Scopus)

    Abstract

    Dynamic secondary ion mass spectrometry (d-SIMS) has been applied to the analysis of the multilayered structure of GaInP/Ga(In)As/Ge concentration photovoltaic devices fabricated by metal organic chemical vapour deposition (MOCVD). Within the arsenal of techniques required to characterize such devices, SIMS represents the most powerful one due to the complete atomic/molecular information provided, its excellent sensitivity and reproducibility. Under Ar+ sputtering, the sample oxidation state is preserved, allowing for the location of interlayer oxides that may appear during the fabrication.

    Original languageEnglish
    Pages (from-to)646-648
    Number of pages3
    JournalSurface and Interface Analysis
    Volume43
    Issue number1-2
    DOIs
    Publication statusPublished - Jan 2011

    All Science Journal Classification (ASJC) codes

    • Chemistry(all)
    • Condensed Matter Physics
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films
    • Materials Chemistry

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