Depth-profiling analysis of MOCVD-grown triple junction solar cells by SIMS

Helena Téllez; José M. Vadillo; Egbert Rodríguez Messmer; Javier Miguel-Sánchez; J. Javier Laserna

doi:10.1002/sia.3517

Depth-profiling analysis of MOCVD-grown triple junction solar cells by SIMS

Helena Téllez, José M. Vadillo, Egbert Rodríguez Messmer, Javier Miguel-Sánchez, J. Javier Laserna

Research output: Contribution to journal › Article › peer-review

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Abstract

Dynamic secondary ion mass spectrometry (d-SIMS) has been applied to the analysis of the multilayered structure of GaInP/Ga(In)As/Ge concentration photovoltaic devices fabricated by metal organic chemical vapour deposition (MOCVD). Within the arsenal of techniques required to characterize such devices, SIMS represents the most powerful one due to the complete atomic/molecular information provided, its excellent sensitivity and reproducibility. Under Ar⁺ sputtering, the sample oxidation state is preserved, allowing for the location of interlayer oxides that may appear during the fabrication.

Original language	English
Pages (from-to)	646-648
Number of pages	3
Journal	Surface and Interface Analysis
Volume	43
Issue number	1-2
DOIs	https://doi.org/10.1002/sia.3517
Publication status	Published - Jan 2011
Externally published	Yes

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1002/sia.3517

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@article{698c9c5bc6c042f1a2282a5df581db59,

title = "Depth-profiling analysis of MOCVD-grown triple junction solar cells by SIMS",

abstract = "Dynamic secondary ion mass spectrometry (d-SIMS) has been applied to the analysis of the multilayered structure of GaInP/Ga(In)As/Ge concentration photovoltaic devices fabricated by metal organic chemical vapour deposition (MOCVD). Within the arsenal of techniques required to characterize such devices, SIMS represents the most powerful one due to the complete atomic/molecular information provided, its excellent sensitivity and reproducibility. Under Ar+ sputtering, the sample oxidation state is preserved, allowing for the location of interlayer oxides that may appear during the fabrication.",

author = "Helena T{\'e}llez and Vadillo, {Jos{\'e} M.} and Messmer, {Egbert Rodr{\'i}guez} and Javier Miguel-S{\'a}nchez and Laserna, {J. Javier}",

year = "2011",

month = jan,

doi = "10.1002/sia.3517",

language = "English",

volume = "43",

pages = "646--648",

journal = "Surface and Interface Analysis",

issn = "0142-2421",

publisher = "John Wiley and Sons Ltd",

number = "1-2",

}

TY - JOUR

T1 - Depth-profiling analysis of MOCVD-grown triple junction solar cells by SIMS

AU - Téllez, Helena

AU - Vadillo, José M.

AU - Messmer, Egbert Rodríguez

AU - Miguel-Sánchez, Javier

AU - Laserna, J. Javier

PY - 2011/1

Y1 - 2011/1

N2 - Dynamic secondary ion mass spectrometry (d-SIMS) has been applied to the analysis of the multilayered structure of GaInP/Ga(In)As/Ge concentration photovoltaic devices fabricated by metal organic chemical vapour deposition (MOCVD). Within the arsenal of techniques required to characterize such devices, SIMS represents the most powerful one due to the complete atomic/molecular information provided, its excellent sensitivity and reproducibility. Under Ar+ sputtering, the sample oxidation state is preserved, allowing for the location of interlayer oxides that may appear during the fabrication.

AB - Dynamic secondary ion mass spectrometry (d-SIMS) has been applied to the analysis of the multilayered structure of GaInP/Ga(In)As/Ge concentration photovoltaic devices fabricated by metal organic chemical vapour deposition (MOCVD). Within the arsenal of techniques required to characterize such devices, SIMS represents the most powerful one due to the complete atomic/molecular information provided, its excellent sensitivity and reproducibility. Under Ar+ sputtering, the sample oxidation state is preserved, allowing for the location of interlayer oxides that may appear during the fabrication.

UR - http://www.scopus.com/inward/record.url?scp=78951491785&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78951491785&partnerID=8YFLogxK

U2 - 10.1002/sia.3517

DO - 10.1002/sia.3517

M3 - Article

AN - SCOPUS:78951491785

SN - 0142-2421

VL - 43

SP - 646

EP - 648

JO - Surface and Interface Analysis

JF - Surface and Interface Analysis

IS - 1-2

ER -

Depth-profiling analysis of MOCVD-grown triple junction solar cells by SIMS

Abstract

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