Depth-profiling analysis of MOCVD-grown triple junction solar cells by SIMS

Helena Téllez, José M. Vadillo, Egbert Rodríguez Messmer, Javier Miguel-Sánchez, J. Javier Laserna

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Dynamic secondary ion mass spectrometry (d-SIMS) has been applied to the analysis of the multilayered structure of GaInP/Ga(In)As/Ge concentration photovoltaic devices fabricated by metal organic chemical vapour deposition (MOCVD). Within the arsenal of techniques required to characterize such devices, SIMS represents the most powerful one due to the complete atomic/molecular information provided, its excellent sensitivity and reproducibility. Under Ar+ sputtering, the sample oxidation state is preserved, allowing for the location of interlayer oxides that may appear during the fabrication.

Original languageEnglish
Pages (from-to)646-648
Number of pages3
JournalSurface and Interface Analysis
Volume43
Issue number1-2
DOIs
Publication statusPublished - Jan 1 2011

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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    Téllez, H., Vadillo, J. M., Messmer, E. R., Miguel-Sánchez, J., & Laserna, J. J. (2011). Depth-profiling analysis of MOCVD-grown triple junction solar cells by SIMS. Surface and Interface Analysis, 43(1-2), 646-648. https://doi.org/10.1002/sia.3517