Design and demonstration of high breakdown voltage GaN high electron mobility transistor (HEMT) using field plate structure for power electronics applications

Wataru Saito, Yoshiharu Takada, Masahiko Kuraguchi, Kunio Tsuda, Ichiro Omura, Tsuneo Ogura

Research output: Contribution to journalArticle


AlGaN/GaN power high electron mobility transistors (HEMTs) with a breakdown voltage of 600V are fabricated and demonstrated as switching power devices for motor drive and power supply applications. A high breakdown voltage was realized in the fabricated power-HEMT by the field plate technique and an ultra low on-state resistance of 3.3 mΩcm2, which is 20 times lower than the silicon limit, due to the high critical field of the GaN material and the high mobility in a two-dimensional electron gas channel. A device with the double-field plate structure was also designed using two-dimensional device simulation to increase the breakdown voltage without any increase of the GaN layer thickness.

Original languageEnglish
Pages (from-to)2239-2242
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number4 B
Publication statusPublished - Apr 2004
Externally publishedYes


All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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