Design and implementation of a non-destructive test circuit for SiC-MOSFETs

Keiji Wada, Shinichi Nishizawa, Hiromichi Ohashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

Silicon carbide(SiC) power devices have been developed and they are sold in markets. Many papers have dealt with inverter circuits that use SiC power devices to improving efficiency and realize high power density converters. However, the power converters that use SiC power devices have not become commercially available, because the reliability of the SiC-MOSFET under switching-operation has not been sufficiently discussed. This paper presents a non-destructive test circuit for SiC-MOSFETs, and the experimental results have confirmed the validity of the non-destructive test circuit for Si- and SiC-MOSFETs. Moreover, the experimental results presents the phenomenon just before destruction of the MOSFETs. The purpose of the non-destructive test circuit is to evaluate the extreme conditions under actual switching operation without the destruction of the power devices. This paper shows experimental results under short-circuit tests for Si super junction MOSFETs (SJ-MOSFETs), and SiC double-diffusion MOSFETs (DMOSFETs). These experimental results will be analyzed to improve the reliability of SiC power device. As a result, the short-circuit switching operation of the SiC-MOSFET is observed to be different from that of the Si-MOSFET.

Original languageEnglish
Title of host publicationConference Proceedings - 2012 IEEE 7th International Power Electronics and Motion Control Conference - ECCE Asia, IPEMC 2012
Pages10-15
Number of pages6
Volume1
DOIs
Publication statusPublished - 2012
Externally publishedYes
Event2012 IEEE 7th International Power Electronics and Motion Control Conference - ECCE Asia, IPEMC 2012 - Harbin, China
Duration: Jun 2 2012Jun 5 2012

Other

Other2012 IEEE 7th International Power Electronics and Motion Control Conference - ECCE Asia, IPEMC 2012
CountryChina
CityHarbin
Period6/2/126/5/12

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All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Wada, K., Nishizawa, S., & Ohashi, H. (2012). Design and implementation of a non-destructive test circuit for SiC-MOSFETs. In Conference Proceedings - 2012 IEEE 7th International Power Electronics and Motion Control Conference - ECCE Asia, IPEMC 2012 (Vol. 1, pp. 10-15). [6258831] https://doi.org/10.1109/IPEMC.2012.6258831