Design of class-C FBAR-based oscillator for low power applications

S. A. Enche Ab Rahim; Guoqiang Zhang; Takana Kaho; Ramesh Pokharel

doi:10.1109/RFM.2015.7587701

Design of class-C FBAR-based oscillator for low power applications

S. A. Enche Ab Rahim, Guoqiang Zhang, Takana Kaho, Ramesh Pokharel

Department of I&E Visionaries

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

This paper presents a CMOS cross-coupled film bulk acoustic resonator (FBAR) oscillator which was designed in class-C topology in order to improve phase noise and power consumption. The designed class-C FBAR oscillator shows lower phase noise with the same power consumption than that of a comparatively designed class-B FBAR oscillator. The efficient current generation in class-C leads to the improvement. The designed FBAR oscillator exhibits a phase noise of -154.7 dBc/Hz at 1 MHz from carrier frequency with a total power consumption of 1.21 mW and a figure-of-merit (FoM) of 220 dB.

Original language	English
Title of host publication	RFM 2015 - 2015 IEEE International RF and Microwave Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	7-10
Number of pages	4
ISBN (Electronic)	9781467381703
DOIs	https://doi.org/10.1109/RFM.2015.7587701
Publication status	Published - Oct 10 2016
Event	6th IEEE International RF and Microwave Conference, RFM 2015 - Kuching, Sarawak, Malaysia Duration: Dec 14 2015 → Dec 16 2015

Other

Other	6th IEEE International RF and Microwave Conference, RFM 2015
Country/Territory	Malaysia
City	Kuching, Sarawak
Period	12/14/15 → 12/16/15

All Science Journal Classification (ASJC) codes

Computer Networks and Communications
Instrumentation

Access to Document

10.1109/RFM.2015.7587701

Cite this

Enche Ab Rahim, SA, Zhang, G, Kaho, T & Pokharel, R 2016, Design of class-C FBAR-based oscillator for low power applications. in RFM 2015 - 2015 IEEE International RF and Microwave Conference., 7587701, Institute of Electrical and Electronics Engineers Inc., pp. 7-10, 6th IEEE International RF and Microwave Conference, RFM 2015, Kuching, Sarawak, Malaysia, 12/14/15. https://doi.org/10.1109/RFM.2015.7587701

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title = "Design of class-C FBAR-based oscillator for low power applications",

abstract = "This paper presents a CMOS cross-coupled film bulk acoustic resonator (FBAR) oscillator which was designed in class-C topology in order to improve phase noise and power consumption. The designed class-C FBAR oscillator shows lower phase noise with the same power consumption than that of a comparatively designed class-B FBAR oscillator. The efficient current generation in class-C leads to the improvement. The designed FBAR oscillator exhibits a phase noise of -154.7 dBc/Hz at 1 MHz from carrier frequency with a total power consumption of 1.21 mW and a figure-of-merit (FoM) of 220 dB.",

author = "{Enche Ab Rahim}, {S. A.} and Guoqiang Zhang and Takana Kaho and Ramesh Pokharel",

year = "2016",

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doi = "10.1109/RFM.2015.7587701",

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booktitle = "RFM 2015 - 2015 IEEE International RF and Microwave Conference",

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note = "6th IEEE International RF and Microwave Conference, RFM 2015 ; Conference date: 14-12-2015 Through 16-12-2015",

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T1 - Design of class-C FBAR-based oscillator for low power applications

AU - Enche Ab Rahim, S. A.

AU - Zhang, Guoqiang

AU - Kaho, Takana

AU - Pokharel, Ramesh

PY - 2016/10/10

Y1 - 2016/10/10

N2 - This paper presents a CMOS cross-coupled film bulk acoustic resonator (FBAR) oscillator which was designed in class-C topology in order to improve phase noise and power consumption. The designed class-C FBAR oscillator shows lower phase noise with the same power consumption than that of a comparatively designed class-B FBAR oscillator. The efficient current generation in class-C leads to the improvement. The designed FBAR oscillator exhibits a phase noise of -154.7 dBc/Hz at 1 MHz from carrier frequency with a total power consumption of 1.21 mW and a figure-of-merit (FoM) of 220 dB.

AB - This paper presents a CMOS cross-coupled film bulk acoustic resonator (FBAR) oscillator which was designed in class-C topology in order to improve phase noise and power consumption. The designed class-C FBAR oscillator shows lower phase noise with the same power consumption than that of a comparatively designed class-B FBAR oscillator. The efficient current generation in class-C leads to the improvement. The designed FBAR oscillator exhibits a phase noise of -154.7 dBc/Hz at 1 MHz from carrier frequency with a total power consumption of 1.21 mW and a figure-of-merit (FoM) of 220 dB.

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M3 - Conference contribution

AN - SCOPUS:84995475703

SP - 7

EP - 10

BT - RFM 2015 - 2015 IEEE International RF and Microwave Conference

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 6th IEEE International RF and Microwave Conference, RFM 2015

Y2 - 14 December 2015 through 16 December 2015

ER -

Design of class-C FBAR-based oscillator for low power applications

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