Design of high-linearity amplifier for wireless LAN transceiver

O. Nizhnik; Ramesh Pokharel; Haruichi Kanaya; K. Yoshida

doi:10.1109/APMC.2007.4554554

Design of high-linearity amplifier for wireless LAN transceiver

O. Nizhnik, Ramesh Pokharel, Haruichi Kanaya, K. Yoshida

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

High third- order intercept output point (OIP3) RF amplifier, suitable for cheap semiconductor technology is proposed. The circuit functionality simulated using Agilent ADS and parasitic components were taken into account using Assura RCX chip design software. Chip has designed for TSMC 0.35-um BiCMOS process. An OIP3 over +30dBm was achieved with a gain of 8 dB, noise figure 5dB, and a power consumption 80 mW. Amplifier is intended to be used in receiver and transmitter paths of the 802.11a/b/n wireless LAN front-end in 5 GHz band.

Original language	English
Title of host publication	2007 Asia-Pacific Microwave Conference, APMC
DOIs	https://doi.org/10.1109/APMC.2007.4554554
Publication status	Published - Dec 1 2007
Event	Asia-Pacific Microwave Conference, APMC 2007 - Bangkok, Thailand Duration: Dec 11 2007 → Dec 14 2007

Other

Other	Asia-Pacific Microwave Conference, APMC 2007
Country	Thailand
City	Bangkok
Period	12/11/07 → 12/14/07

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.1109/APMC.2007.4554554

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title = "Design of high-linearity amplifier for wireless LAN transceiver",

abstract = "High third- order intercept output point (OIP3) RF amplifier, suitable for cheap semiconductor technology is proposed. The circuit functionality simulated using Agilent ADS and parasitic components were taken into account using Assura RCX chip design software. Chip has designed for TSMC 0.35-um BiCMOS process. An OIP3 over +30dBm was achieved with a gain of 8 dB, noise figure 5dB, and a power consumption 80 mW. Amplifier is intended to be used in receiver and transmitter paths of the 802.11a/b/n wireless LAN front-end in 5 GHz band.",

author = "O. Nizhnik and Ramesh Pokharel and Haruichi Kanaya and K. Yoshida",

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AU - Nizhnik, O.

AU - Pokharel, Ramesh

AU - Kanaya, Haruichi

AU - Yoshida, K.

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Y1 - 2007/12/1

N2 - High third- order intercept output point (OIP3) RF amplifier, suitable for cheap semiconductor technology is proposed. The circuit functionality simulated using Agilent ADS and parasitic components were taken into account using Assura RCX chip design software. Chip has designed for TSMC 0.35-um BiCMOS process. An OIP3 over +30dBm was achieved with a gain of 8 dB, noise figure 5dB, and a power consumption 80 mW. Amplifier is intended to be used in receiver and transmitter paths of the 802.11a/b/n wireless LAN front-end in 5 GHz band.

AB - High third- order intercept output point (OIP3) RF amplifier, suitable for cheap semiconductor technology is proposed. The circuit functionality simulated using Agilent ADS and parasitic components were taken into account using Assura RCX chip design software. Chip has designed for TSMC 0.35-um BiCMOS process. An OIP3 over +30dBm was achieved with a gain of 8 dB, noise figure 5dB, and a power consumption 80 mW. Amplifier is intended to be used in receiver and transmitter paths of the 802.11a/b/n wireless LAN front-end in 5 GHz band.

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BT - 2007 Asia-Pacific Microwave Conference, APMC

T2 - Asia-Pacific Microwave Conference, APMC 2007

Y2 - 11 December 2007 through 14 December 2007

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