Design optimization of high breakdown voltage AlGaN-GaN power HEMT on an insulating substrate for RONA-VB tradeoff characteristics

Wataru Saito, Masahiko Kuraguchi, Yoshiharu Takada, Kunio Tsuda, Ichiro Omura, Tsuneo Ogura

Research output: Contribution to journalArticle

74 Citations (Scopus)

Abstract

High breakdown voltage AlGaN-GaN power high-electron mobility transfers (HEMTs) on an insulating substrate were designed for the power electronics application. The field plate structure was employed for high breakdown voltage. The field plate length, the insulator thickness and AlGaN layer doping concentration were design parameters for the breakdown voltage. The optimization of the contact length and contact resistivity reduction were effective to reduce the specific on-resistance. The tradeoff characteristics between the on-resistance and the breakdown voltage can be improved by the optimization of the above design parameters, and the on-resistance can be estimated to be about 0.6 mΩ · cm2 for the breakdown voltage of 600 V. This on-resistance is almost the same as that for the device on a conductive substrate.

Original languageEnglish
Pages (from-to)106-111
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume52
Issue number1
DOIs
Publication statusPublished - Jan 1 2005
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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