We have investigated a magnetization process of a permalloy nanowire by using a ballistic micro-Hall sensor consisting of GaAs/AlGaAs two-dimensional electron gas. Although a conventional bi-stable hysteresis loop with a rectangular shape was observed in the Hall resistance measurement, unexpected extra resistance changes were observed in a bend resistance measurement. These unconventional features are quantitatively explained by the magnetic transitions among the meta-stable edge-domain structures in the ferromagnetic wire. The geometrical dependence of these resistance changes and their application possibility for the multiple-valued memory were also discussed.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)