Detection of edge magnetic state by a ballistic bend resistance measurement

Takahiro Matsunaga; Kohsuke Furukawa; Yuhsuke Kanda; Masahiro Hara; Tatsuya Nomura; Takashi Kimura

doi:10.1063/1.4812729

Detection of edge magnetic state by a ballistic bend resistance measurement

Takahiro Matsunaga, Kohsuke Furukawa, Yuhsuke Kanda, Masahiro Hara, Tatsuya Nomura, Takashi Kimura

Condensed Matter Physics

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We have investigated a magnetization process of a permalloy nanowire by using a ballistic micro-Hall sensor consisting of GaAs/AlGaAs two-dimensional electron gas. Although a conventional bi-stable hysteresis loop with a rectangular shape was observed in the Hall resistance measurement, unexpected extra resistance changes were observed in a bend resistance measurement. These unconventional features are quantitatively explained by the magnetic transitions among the meta-stable edge-domain structures in the ferromagnetic wire. The geometrical dependence of these resistance changes and their application possibility for the multiple-valued memory were also discussed.

Original language	English
Article number	252405
Journal	Applied Physics Letters
Volume	102
Issue number	25
DOIs	https://doi.org/10.1063/1.4812729
Publication status	Published - Jun 24 2013

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4812729

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AU - Matsunaga, Takahiro

AU - Furukawa, Kohsuke

AU - Kanda, Yuhsuke

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AU - Nomura, Tatsuya

AU - Kimura, Takashi

PY - 2013/6/24

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AB - We have investigated a magnetization process of a permalloy nanowire by using a ballistic micro-Hall sensor consisting of GaAs/AlGaAs two-dimensional electron gas. Although a conventional bi-stable hysteresis loop with a rectangular shape was observed in the Hall resistance measurement, unexpected extra resistance changes were observed in a bend resistance measurement. These unconventional features are quantitatively explained by the magnetic transitions among the meta-stable edge-domain structures in the ferromagnetic wire. The geometrical dependence of these resistance changes and their application possibility for the multiple-valued memory were also discussed.

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