Detection of the scintillation light emitted from direct-bandgap compound semiconductors by a Si avalanche photodiode at 150 mK

Takashi Yasumune, Nobuyasu Takayama, Keisuke Maehata, Kenji Ishibashi, Takahiro Umeno

Research output: Contribution to journalArticle

Abstract

In this work, the direct-bandgap compound semiconductor materials are irradiated by α particles emitted from 241Am for the detection of scintillation light at the temperature of 150 mK. For the irradiation experiment, two disk shaped samples were fabricated from an epoxy resin mixed with the powder of PbI2 and CuI, respectively. Each disk-samples was cooled down to 150 mK by a compact liquid helium-free dilution refrigerator. A Si avalanche photodiode (APD) was employed for detecting the scintillation light emitted from the disk-sample inside the refrigerator. The detection signal current of Si APD was converted into the voltage pulses by a charge sensitive preamplifier. The voltage pulses of the scintillation light emitted from the direct-bandgap semiconductors were observed at the temperature of 150 mK.

Original languageEnglish
Pages (from-to)447-450
Number of pages4
JournalJournal of Nuclear Science and Technology
Volume45
DOIs
Publication statusPublished - 2008

Fingerprint

Avalanche photodiodes
Scintillation
avalanches
scintillation
photodiodes
Energy gap
Refrigerators
refrigerators
Semiconductor materials
signal detection
preamplifiers
Signal detection
Electric potential
epoxy resins
electric potential
pulses
Epoxy resins
liquid helium
Dilution
Helium

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering

Cite this

Detection of the scintillation light emitted from direct-bandgap compound semiconductors by a Si avalanche photodiode at 150 mK. / Yasumune, Takashi; Takayama, Nobuyasu; Maehata, Keisuke; Ishibashi, Kenji; Umeno, Takahiro.

In: Journal of Nuclear Science and Technology, Vol. 45, 2008, p. 447-450.

Research output: Contribution to journalArticle

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