Determination of C concentration in P-doped n-type Czochralski-grown Si crystals by liquid N temperature photoluminescence after electron irradiation

Yoichiro Ishikawa, Michio Tajima, Hirotatsu Kiuchi, Atsushi Ogura, Yoshiji Miyamura, Hirofumi Harada, Koichi Kakimoto

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We demonstrated the effectiveness of photoluminescence (PL) measurement at liquid N temperature after electron irradiation for the determination of the C concentration in P-doped n-type Czochralski-grown Si crystals. The disappearance of P-related lines simplifies the spectral analysis at 77 K, enabling us to estimate the C concentration from the G-line intensity ratio regardless of the difference in P concentration. The C concentration estimated by PL measurement at 77 K was in good agreement with those by measurement PL at 4.2 K and IR absorption. Unsusceptibility to the concentration of dopant impurities is a practical advantage of the PL measurement at 77 K over that at 4.2 K.

Original languageEnglish
Article number08RB06
JournalJapanese Journal of Applied Physics
Volume57
Issue number8
DOIs
Publication statusPublished - Aug 1 2018

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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