Determination of C concentration in P-doped n-type Czochralski-grown Si crystals by liquid N temperature photoluminescence after electron irradiation

Yoichiro Ishikawa, Michio Tajima, Hirotatsu Kiuchi, Atsushi Ogura, Yoshiji Miyamura, Hirofumi Harada, Koichi Kakimoto

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We demonstrated the effectiveness of photoluminescence (PL) measurement at liquid N temperature after electron irradiation for the determination of the C concentration in P-doped n-type Czochralski-grown Si crystals. The disappearance of P-related lines simplifies the spectral analysis at 77 K, enabling us to estimate the C concentration from the G-line intensity ratio regardless of the difference in P concentration. The C concentration estimated by PL measurement at 77 K was in good agreement with those by measurement PL at 4.2 K and IR absorption. Unsusceptibility to the concentration of dopant impurities is a practical advantage of the PL measurement at 77 K over that at 4.2 K.

Original languageEnglish
Article number08RB06
JournalJapanese Journal of Applied Physics
Volume57
Issue number8
DOIs
Publication statusPublished - Aug 1 2018

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Electron irradiation
electron irradiation
Photoluminescence
photoluminescence
Crystals
Liquids
liquids
crystals
Temperature
temperature
Spectrum analysis
Doping (additives)
spectrum analysis
Impurities
impurities
estimates

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Determination of C concentration in P-doped n-type Czochralski-grown Si crystals by liquid N temperature photoluminescence after electron irradiation. / Ishikawa, Yoichiro; Tajima, Michio; Kiuchi, Hirotatsu; Ogura, Atsushi; Miyamura, Yoshiji; Harada, Hirofumi; Kakimoto, Koichi.

In: Japanese Journal of Applied Physics, Vol. 57, No. 8, 08RB06, 01.08.2018.

Research output: Contribution to journalArticle

Ishikawa, Yoichiro ; Tajima, Michio ; Kiuchi, Hirotatsu ; Ogura, Atsushi ; Miyamura, Yoshiji ; Harada, Hirofumi ; Kakimoto, Koichi. / Determination of C concentration in P-doped n-type Czochralski-grown Si crystals by liquid N temperature photoluminescence after electron irradiation. In: Japanese Journal of Applied Physics. 2018 ; Vol. 57, No. 8.
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AU - Kakimoto, Koichi

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