Abstract
Deuterium retention in two types of toughened, fine-grained recrystallized W (TFGR W-1.2 wt% titanium carbide (TiC) and TFGR W-3.3 wt% tantalum carbide (TaC)) was studied, compared to pure W. D plasma exposure was performed to a fluence of 1 × 1026 D m-2 at a temperature of 573 K, followed by retention measurement analysis by nuclear reaction analysis and thermal desorption spectroscopy (TDS). It is found that D retention in TFGR W is higher than that in pure W. This is because TFGR W has a high density of trapping sites with low trapping energy and dispersoid (TiC or TaC) may serve as additional trapping sites with high trapping energy. Different irradiation experiments (D ion beam implantation) were also conducted at sample temperatures of 473-873 K, followed by TDS. At higher sample temperature (> 700 K), D retention in TFGR W-3.3 wt% TaC is lower than that in TFGR W-1.2 wt% TiC. This may be due to different types of dispersoids.
| Original language | English |
|---|---|
| Article number | 014048 |
| Journal | Physica Scripta |
| Volume | T159 |
| DOIs | |
| Publication status | Published - 2014 |
| Event | 14th International Conference on Plasma-Facing Materials and Components for Fusion Applications, PFMC 2013 - Julich, Germany Duration: May 13 2013 → May 17 2013 |
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All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
- Mathematical Physics
- Condensed Matter Physics
- Physics and Astronomy(all)
Cite this
Deuterium retention in various toughened, fine-grained recrystallized tungsten materials under different irradiation conditions. / Oya, M.; Lee, H. T.; Ohtsuka, Y.; Ueda, Y.; Kurishita, H.; Oyaidzu, M.; Yamanishi, T.
In: Physica Scripta, Vol. T159, 014048, 2014.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Deuterium retention in various toughened, fine-grained recrystallized tungsten materials under different irradiation conditions
AU - Oya, M.
AU - Lee, H. T.
AU - Ohtsuka, Y.
AU - Ueda, Y.
AU - Kurishita, H.
AU - Oyaidzu, M.
AU - Yamanishi, T.
PY - 2014
Y1 - 2014
N2 - Deuterium retention in two types of toughened, fine-grained recrystallized W (TFGR W-1.2 wt% titanium carbide (TiC) and TFGR W-3.3 wt% tantalum carbide (TaC)) was studied, compared to pure W. D plasma exposure was performed to a fluence of 1 × 1026 D m-2 at a temperature of 573 K, followed by retention measurement analysis by nuclear reaction analysis and thermal desorption spectroscopy (TDS). It is found that D retention in TFGR W is higher than that in pure W. This is because TFGR W has a high density of trapping sites with low trapping energy and dispersoid (TiC or TaC) may serve as additional trapping sites with high trapping energy. Different irradiation experiments (D ion beam implantation) were also conducted at sample temperatures of 473-873 K, followed by TDS. At higher sample temperature (> 700 K), D retention in TFGR W-3.3 wt% TaC is lower than that in TFGR W-1.2 wt% TiC. This may be due to different types of dispersoids.
AB - Deuterium retention in two types of toughened, fine-grained recrystallized W (TFGR W-1.2 wt% titanium carbide (TiC) and TFGR W-3.3 wt% tantalum carbide (TaC)) was studied, compared to pure W. D plasma exposure was performed to a fluence of 1 × 1026 D m-2 at a temperature of 573 K, followed by retention measurement analysis by nuclear reaction analysis and thermal desorption spectroscopy (TDS). It is found that D retention in TFGR W is higher than that in pure W. This is because TFGR W has a high density of trapping sites with low trapping energy and dispersoid (TiC or TaC) may serve as additional trapping sites with high trapping energy. Different irradiation experiments (D ion beam implantation) were also conducted at sample temperatures of 473-873 K, followed by TDS. At higher sample temperature (> 700 K), D retention in TFGR W-3.3 wt% TaC is lower than that in TFGR W-1.2 wt% TiC. This may be due to different types of dispersoids.
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U2 - 10.1088/0031-8949/2014/T159/014048
DO - 10.1088/0031-8949/2014/T159/014048
M3 - Article
AN - SCOPUS:84902213543
VL - T159
JO - Physica Scripta
JF - Physica Scripta
SN - 0031-8949
M1 - 014048
ER -