Development and application of a structured/unstructured combined mesh scheme for global modeling of a directional solidification process of silicon

Zaoyang Li, Lijun Liu, Koichi Kakimoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Citations (Scopus)

Abstract

In order to improve the accuracy and efficiency of global modeling of a directional solidification process for solar silicon, we developed a structured/unstructured combined mesh scheme. The multi-block structured mesh was used to discretize those subdomains with regular boundaries. The unstructured mesh was used to discretize those sub-domains wim highly irregular boundaries. Then it was applied in the global modeling of heat transfer for a directional solidification process to investigate the effect of argon flow rate on heat transfer and impurities transport (oxygen as an example) in the furnace. It was found that the argon flow has little effect on the global heat transfer compared with thermal radiation, while its effect on impurities transport is remarkable. The amount of oxygen carried away by the argon flow at the melt surface is closely correlated with the argon flow rate.

Original languageEnglish
Title of host publicationChina Semiconductor Technology International Conference 2010, CSTIC 2010
Pages1047-1052
Number of pages6
Edition1
DOIs
Publication statusPublished - Dec 1 2010
EventChina Semiconductor Technology International Conference 2010, CSTIC 2010 - Shanghai, China
Duration: Mar 18 2010Mar 19 2010

Publication series

NameECS Transactions
Number1
Volume27
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherChina Semiconductor Technology International Conference 2010, CSTIC 2010
CountryChina
CityShanghai
Period3/18/103/19/10

Fingerprint

Solidification
Argon
Silicon
Heat transfer
Flow rate
Impurities
Oxygen
Heat radiation
Furnaces

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Li, Z., Liu, L., & Kakimoto, K. (2010). Development and application of a structured/unstructured combined mesh scheme for global modeling of a directional solidification process of silicon. In China Semiconductor Technology International Conference 2010, CSTIC 2010 (1 ed., pp. 1047-1052). (ECS Transactions; Vol. 27, No. 1). https://doi.org/10.1149/1.3360749

Development and application of a structured/unstructured combined mesh scheme for global modeling of a directional solidification process of silicon. / Li, Zaoyang; Liu, Lijun; Kakimoto, Koichi.

China Semiconductor Technology International Conference 2010, CSTIC 2010. 1. ed. 2010. p. 1047-1052 (ECS Transactions; Vol. 27, No. 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Li, Z, Liu, L & Kakimoto, K 2010, Development and application of a structured/unstructured combined mesh scheme for global modeling of a directional solidification process of silicon. in China Semiconductor Technology International Conference 2010, CSTIC 2010. 1 edn, ECS Transactions, no. 1, vol. 27, pp. 1047-1052, China Semiconductor Technology International Conference 2010, CSTIC 2010, Shanghai, China, 3/18/10. https://doi.org/10.1149/1.3360749
Li Z, Liu L, Kakimoto K. Development and application of a structured/unstructured combined mesh scheme for global modeling of a directional solidification process of silicon. In China Semiconductor Technology International Conference 2010, CSTIC 2010. 1 ed. 2010. p. 1047-1052. (ECS Transactions; 1). https://doi.org/10.1149/1.3360749
Li, Zaoyang ; Liu, Lijun ; Kakimoto, Koichi. / Development and application of a structured/unstructured combined mesh scheme for global modeling of a directional solidification process of silicon. China Semiconductor Technology International Conference 2010, CSTIC 2010. 1. ed. 2010. pp. 1047-1052 (ECS Transactions; 1).
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