Development of a nonperiodic boundary practical simulator for oxide and shallow trench isolation chemical mechanical polishing processes

Atsushi Ohtake, Toshiyuki Arai, Syuhei Kurokawa, Toshiro Doi

Research output: Contribution to journalArticle

Abstract

We developed a fast simulator for the chemical mechanical polishing (CMP) process that works in nonperiodic boundary conditions. Since periodic boundary conditions are not used, it can calculate anywhere on a wafer, such as the wafer's edge. Additionally, we enhanced the simulator to calculate the shallow trench isolation (STI)-CMP process. In the STI-CMP simulation method, additionally required simulation parameters are only one, under the assumption that dishing reaches steady state in enough short time relative to total polishing time. We found that the simulation results could match experimental film thicknesses with an error range of about 10-20 nm and that the calculation time was reduced to 1/20 relative to when the acceleration method was not introduced.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume158
Issue number2
DOIs
Publication statusPublished - Jan 5 2011

Fingerprint

Chemical mechanical polishing
polishing
Oxides
simulators
isolation
Simulators
oxides
Boundary conditions
wafers
boundary conditions
range errors
Polishing
Film thickness
simulation
film thickness

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

Development of a nonperiodic boundary practical simulator for oxide and shallow trench isolation chemical mechanical polishing processes. / Ohtake, Atsushi; Arai, Toshiyuki; Kurokawa, Syuhei; Doi, Toshiro.

In: Journal of the Electrochemical Society, Vol. 158, No. 2, 05.01.2011.

Research output: Contribution to journalArticle

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