Development of abrasive-free copper cmp process ? reduction of copper residue using randomly formed polyurethane pad

Yohei Yamada, Nobuhiro Konishi, Syuhei Kurokawa, Toshiro Doi

Research output: Contribution to journalArticle

Abstract

Abrasive free polishing (AFP) for copper interconnects was improved. A chemical mechanical polishing (CMP) process using in two-step Cu AFP conditions eliminates copper residue. The process has a higher short-yield margin than the conventional AFP process. It uses both a high selective barrier metal slurry and a randomly foamed polyurethane pad to achieve the same Cu wiring sheet resistance as a conventional polishing process. However, this method allows for increased depressions of less than 20% on a 20-μm Cu line of 98% density after Cu-AFP. We demonstrate that the process can meet the planarity target without any extra intermediate oxide polishes. Moreover, it is the compatible with low-k films and the Cu AFP process, and this prevents delamination and fractures in lowk materials during CMP. Therefore, this process should meet the requirements for Cu interconnects.

Original languageEnglish
Pages (from-to)496-500
Number of pages5
JournalSeimitsu Kogaku Kaishi/Journal of the Japan Society for Precision Engineering
Volume75
Issue number4
DOIs
Publication statusPublished - Jan 1 2009

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Polishing
Abrasives
Polyurethanes
Copper
Chemical mechanical polishing
Sheet resistance
Electric wiring
Delamination
Oxides
Metals

All Science Journal Classification (ASJC) codes

  • Mechanical Engineering

Cite this

Development of abrasive-free copper cmp process ? reduction of copper residue using randomly formed polyurethane pad. / Yamada, Yohei; Konishi, Nobuhiro; Kurokawa, Syuhei; Doi, Toshiro.

In: Seimitsu Kogaku Kaishi/Journal of the Japan Society for Precision Engineering, Vol. 75, No. 4, 01.01.2009, p. 496-500.

Research output: Contribution to journalArticle

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