Development of LEED apparatus using nano-tips fabricated by field-assisted etching

Jo Onoda; Tomomi Kanaoka; Megumi Kumon; Seigi Mizuno

doi:10.1380/ejssnt.2012.292

Development of LEED apparatus using nano-tips fabricated by field-assisted etching

Jo Onoda, Tomomi Kanaoka, Megumi Kumon, Seigi Mizuno

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We have developed a low-energy electron diffraction (LEED) apparatus using field emission (FE) from scanning tunneling microscopy (STM) tips. Tips fabricated by field-assisted H₂O etching enabled us to observe LEED patterns of few layer graphene grown on SiC(0001) reproducibly. The obtained hexagonal patterns showed a bias dependency and those obtained at sample biases of 93 V, 56 V, and 28 V were interpreted as patterns derived from the graphene, the SiC(0001) substrate, and a (6√3 × 6√3)R30° buffer layer, respectively. The analysis of Ewald sphere construction indicated that the opening angles of FE from the tip could be deduced directly from the LEED patterns, and their experimentally obtained value was ∼13°. From the opening angle of FE and the dataset of tip-to-sample distances, the irradiated areas were estimated at 350 nmø when the sample bias was 100 V.

Original language	English
Pages (from-to)	292-296
Number of pages	5
Journal	e-Journal of Surface Science and Nanotechnology
Volume	10
DOIs	https://doi.org/10.1380/ejssnt.2012.292
Publication status	Published - 2012

All Science Journal Classification (ASJC) codes

Biotechnology
Bioengineering
Condensed Matter Physics
Mechanics of Materials
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1380/ejssnt.2012.292

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title = "Development of LEED apparatus using nano-tips fabricated by field-assisted etching",

abstract = "We have developed a low-energy electron diffraction (LEED) apparatus using field emission (FE) from scanning tunneling microscopy (STM) tips. Tips fabricated by field-assisted H2O etching enabled us to observe LEED patterns of few layer graphene grown on SiC(0001) reproducibly. The obtained hexagonal patterns showed a bias dependency and those obtained at sample biases of 93 V, 56 V, and 28 V were interpreted as patterns derived from the graphene, the SiC(0001) substrate, and a (6√3 × 6√3)R30° buffer layer, respectively. The analysis of Ewald sphere construction indicated that the opening angles of FE from the tip could be deduced directly from the LEED patterns, and their experimentally obtained value was ∼13°. From the opening angle of FE and the dataset of tip-to-sample distances, the irradiated areas were estimated at 350 nm{\o} when the sample bias was 100 V.",

author = "Jo Onoda and Tomomi Kanaoka and Megumi Kumon and Seigi Mizuno",

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doi = "10.1380/ejssnt.2012.292",

language = "English",

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journal = "e-Journal of Surface Science and Nanotechnology",

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T1 - Development of LEED apparatus using nano-tips fabricated by field-assisted etching

AU - Onoda, Jo

AU - Kanaoka, Tomomi

AU - Kumon, Megumi

AU - Mizuno, Seigi

PY - 2012

Y1 - 2012

N2 - We have developed a low-energy electron diffraction (LEED) apparatus using field emission (FE) from scanning tunneling microscopy (STM) tips. Tips fabricated by field-assisted H2O etching enabled us to observe LEED patterns of few layer graphene grown on SiC(0001) reproducibly. The obtained hexagonal patterns showed a bias dependency and those obtained at sample biases of 93 V, 56 V, and 28 V were interpreted as patterns derived from the graphene, the SiC(0001) substrate, and a (6√3 × 6√3)R30° buffer layer, respectively. The analysis of Ewald sphere construction indicated that the opening angles of FE from the tip could be deduced directly from the LEED patterns, and their experimentally obtained value was ∼13°. From the opening angle of FE and the dataset of tip-to-sample distances, the irradiated areas were estimated at 350 nmø when the sample bias was 100 V.

AB - We have developed a low-energy electron diffraction (LEED) apparatus using field emission (FE) from scanning tunneling microscopy (STM) tips. Tips fabricated by field-assisted H2O etching enabled us to observe LEED patterns of few layer graphene grown on SiC(0001) reproducibly. The obtained hexagonal patterns showed a bias dependency and those obtained at sample biases of 93 V, 56 V, and 28 V were interpreted as patterns derived from the graphene, the SiC(0001) substrate, and a (6√3 × 6√3)R30° buffer layer, respectively. The analysis of Ewald sphere construction indicated that the opening angles of FE from the tip could be deduced directly from the LEED patterns, and their experimentally obtained value was ∼13°. From the opening angle of FE and the dataset of tip-to-sample distances, the irradiated areas were estimated at 350 nmø when the sample bias was 100 V.

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JO - e-Journal of Surface Science and Nanotechnology

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ER -

Development of LEED apparatus using nano-tips fabricated by field-assisted etching

Abstract

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