軟X線源を用いた半導体薄膜の低温結晶化技術の開発 (シリコン材料・デバイス)

Translated title of the contribution: Development of Low-Temperature Crystallization Method of Thin Film Semiconductor Using Soft X-ray Source

部家 彰, 野々村 勇希, 木野 翔太, 松尾 直人, 天野 壮, 宮本 修治, 神田 一浩, 望月 孝晏, 都甲 薫, 佐道 泰造, 宮尾 正信

Research output: Contribution to journalArticlepeer-review

Abstract

It is necessary two processes (crystal-nucleus formation and crystal grain growth) for crystallization. In general, the activation energy of crystal-nucleus formation is higher than that of grain growth. To realize low-temperature crystallization, we tried to form the quasi-nucleus by soft X-ray irradiation. In this study, the effects of soft X-ray irradiation on crystallization of a-Si and a-Ge films were investigated. The crystallization temperatures of a-Si film and a-Ge film were decreased from 680℃ to 580℃ and 500℃ to 420℃ by soft X-ray irradiation, respectively. The decrease in crystallization temperature is also related to enhancement of atomic migration and atoms transitioning into a quasi-nuclei phase in the films.
Translated title of the contributionDevelopment of Low-Temperature Crystallization Method of Thin Film Semiconductor Using Soft X-ray Source
Original languageJapanese
Pages (from-to)71-76
Number of pages6
JournalIEICE technical report
Volume111
Issue number357
Publication statusPublished - Dec 16 2011

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