Development of metal source/drain Ge-CMOS using TiN/Ge and HfGe/Ge contacts

Hiroshi Nakashima, Keisuke Yamamoto, Dong Wang

    Research output: Contribution to journalArticlepeer-review

    1 Citation (Scopus)

    Abstract

    Ge is of great interest as a candidate channel material for future CMOS devices due to its high intrinsic carrier mobility. To translate this potential into CMOS devices, it is desirable that the source/drain (S/D) junctions are composed by metal/Ge contacts. However, the Fermi-level pinning impedes the embodiments, by which the contact formation showing a low electron barrier height (ΦBN) is very difficult. We have found TiN on Ge is superior as a low Φ BN contact. In this paper, we present the detailed fabrication and the electrical performance of a TiN/Ge contact. Furthermore, we present the excellence of a HfGe/Ge contact showing a low hole barrier height (ΦBP). Finally, we present the fabrication and device performance of metal S/D n- and p-MOSFETs using TiN/Ge and HfGe/Ge contacts, respectively.

    Original languageEnglish
    Pages (from-to)167-178
    Number of pages12
    JournalECS Transactions
    Volume58
    Issue number9
    DOIs
    Publication statusPublished - 2013

    All Science Journal Classification (ASJC) codes

    • Engineering(all)

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