Development of n+-in-p planar pixel quadsensor flip-chipped with FE-I4 readout ASICs

Y. Unno, S. Kamada, K. Yamamura, H. Yamamoto, K. Hanagaki, R. Hori, Y. Ikegami, K. Nakamura, Y. Takubo, R. Takashima, J. Tojo, T. Kono, R. Nagai, S. Saito, K. Sugibayashi, M. Hirose, O. Jinnouchi, S. Sato, H. Sawai, K. HaraKz Sato, Kj Sato, S. Iwabuchi, J. Suzuki

Research output: Contribution to journalArticle

Abstract

We have developed flip-chip modules applicable to the pixel detector for the HL-LHC. New radiation-tolerant n+-in-p planar pixel sensors of a size of four FE-I4 application-specific integrated circuits (ASICs) are laid out in a 6-in wafer. Variation in readout connection for the pixels at the boundary of ASICs is implemented in the design of quadsensors. Bump bonding technology is developed for four ASICs onto one quadsensor. Both sensors and ASICs are thinned to 150 μm before bump bonding, and are held flat with vacuum chucks. Using lead-free SnAg solder bumps, we encounter deficiency with large areas of disconnected bumps after thermal stress treatment, including irradiation. Surface oxidation of the solder bumps is identified as a critical source of this deficiency after bump bonding trials, using SnAg bumps with solder flux, indium bumps, and SnAg bumps with a newly-introduced hydrogen-reflow process. With hydrogen-reflow, we establish flux-less bump bonding technology with SnAg bumps, appropriate for mass production of the flip-chip modules with thin sensors and thin ASICs.

Original languageEnglish
Article numberC01084
JournalJournal of Instrumentation
Volume12
Issue number1
DOIs
Publication statusPublished - Jan 30 2017

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application specific integrated circuits
Application specific integrated circuits
Flip
Integrated Circuits
readout
Pixel
Pixels
pixels
solders
Flip chip
Sensor
Soldering alloys
Hydrogen
sensors
Sensors
modules
chips
Fluxes
Chucks
Module

All Science Journal Classification (ASJC) codes

  • Mathematical Physics
  • Instrumentation

Cite this

Unno, Y., Kamada, S., Yamamura, K., Yamamoto, H., Hanagaki, K., Hori, R., ... Suzuki, J. (2017). Development of n+-in-p planar pixel quadsensor flip-chipped with FE-I4 readout ASICs. Journal of Instrumentation, 12(1), [C01084]. https://doi.org/10.1088/1748-0221/12/01/C01084

Development of n+-in-p planar pixel quadsensor flip-chipped with FE-I4 readout ASICs. / Unno, Y.; Kamada, S.; Yamamura, K.; Yamamoto, H.; Hanagaki, K.; Hori, R.; Ikegami, Y.; Nakamura, K.; Takubo, Y.; Takashima, R.; Tojo, J.; Kono, T.; Nagai, R.; Saito, S.; Sugibayashi, K.; Hirose, M.; Jinnouchi, O.; Sato, S.; Sawai, H.; Hara, K.; Sato, Kz; Sato, Kj; Iwabuchi, S.; Suzuki, J.

In: Journal of Instrumentation, Vol. 12, No. 1, C01084, 30.01.2017.

Research output: Contribution to journalArticle

Unno, Y, Kamada, S, Yamamura, K, Yamamoto, H, Hanagaki, K, Hori, R, Ikegami, Y, Nakamura, K, Takubo, Y, Takashima, R, Tojo, J, Kono, T, Nagai, R, Saito, S, Sugibayashi, K, Hirose, M, Jinnouchi, O, Sato, S, Sawai, H, Hara, K, Sato, K, Sato, K, Iwabuchi, S & Suzuki, J 2017, 'Development of n+-in-p planar pixel quadsensor flip-chipped with FE-I4 readout ASICs', Journal of Instrumentation, vol. 12, no. 1, C01084. https://doi.org/10.1088/1748-0221/12/01/C01084
Unno, Y. ; Kamada, S. ; Yamamura, K. ; Yamamoto, H. ; Hanagaki, K. ; Hori, R. ; Ikegami, Y. ; Nakamura, K. ; Takubo, Y. ; Takashima, R. ; Tojo, J. ; Kono, T. ; Nagai, R. ; Saito, S. ; Sugibayashi, K. ; Hirose, M. ; Jinnouchi, O. ; Sato, S. ; Sawai, H. ; Hara, K. ; Sato, Kz ; Sato, Kj ; Iwabuchi, S. ; Suzuki, J. / Development of n+-in-p planar pixel quadsensor flip-chipped with FE-I4 readout ASICs. In: Journal of Instrumentation. 2017 ; Vol. 12, No. 1.
@article{6ac601ba4f954924a85062ff04628473,
title = "Development of n+-in-p planar pixel quadsensor flip-chipped with FE-I4 readout ASICs",
abstract = "We have developed flip-chip modules applicable to the pixel detector for the HL-LHC. New radiation-tolerant n+-in-p planar pixel sensors of a size of four FE-I4 application-specific integrated circuits (ASICs) are laid out in a 6-in wafer. Variation in readout connection for the pixels at the boundary of ASICs is implemented in the design of quadsensors. Bump bonding technology is developed for four ASICs onto one quadsensor. Both sensors and ASICs are thinned to 150 μm before bump bonding, and are held flat with vacuum chucks. Using lead-free SnAg solder bumps, we encounter deficiency with large areas of disconnected bumps after thermal stress treatment, including irradiation. Surface oxidation of the solder bumps is identified as a critical source of this deficiency after bump bonding trials, using SnAg bumps with solder flux, indium bumps, and SnAg bumps with a newly-introduced hydrogen-reflow process. With hydrogen-reflow, we establish flux-less bump bonding technology with SnAg bumps, appropriate for mass production of the flip-chip modules with thin sensors and thin ASICs.",
author = "Y. Unno and S. Kamada and K. Yamamura and H. Yamamoto and K. Hanagaki and R. Hori and Y. Ikegami and K. Nakamura and Y. Takubo and R. Takashima and J. Tojo and T. Kono and R. Nagai and S. Saito and K. Sugibayashi and M. Hirose and O. Jinnouchi and S. Sato and H. Sawai and K. Hara and Kz Sato and Kj Sato and S. Iwabuchi and J. Suzuki",
year = "2017",
month = "1",
day = "30",
doi = "10.1088/1748-0221/12/01/C01084",
language = "English",
volume = "12",
journal = "Journal of Instrumentation",
issn = "1748-0221",
publisher = "IOP Publishing Ltd.",
number = "1",

}

TY - JOUR

T1 - Development of n+-in-p planar pixel quadsensor flip-chipped with FE-I4 readout ASICs

AU - Unno, Y.

AU - Kamada, S.

AU - Yamamura, K.

AU - Yamamoto, H.

AU - Hanagaki, K.

AU - Hori, R.

AU - Ikegami, Y.

AU - Nakamura, K.

AU - Takubo, Y.

AU - Takashima, R.

AU - Tojo, J.

AU - Kono, T.

AU - Nagai, R.

AU - Saito, S.

AU - Sugibayashi, K.

AU - Hirose, M.

AU - Jinnouchi, O.

AU - Sato, S.

AU - Sawai, H.

AU - Hara, K.

AU - Sato, Kz

AU - Sato, Kj

AU - Iwabuchi, S.

AU - Suzuki, J.

PY - 2017/1/30

Y1 - 2017/1/30

N2 - We have developed flip-chip modules applicable to the pixel detector for the HL-LHC. New radiation-tolerant n+-in-p planar pixel sensors of a size of four FE-I4 application-specific integrated circuits (ASICs) are laid out in a 6-in wafer. Variation in readout connection for the pixels at the boundary of ASICs is implemented in the design of quadsensors. Bump bonding technology is developed for four ASICs onto one quadsensor. Both sensors and ASICs are thinned to 150 μm before bump bonding, and are held flat with vacuum chucks. Using lead-free SnAg solder bumps, we encounter deficiency with large areas of disconnected bumps after thermal stress treatment, including irradiation. Surface oxidation of the solder bumps is identified as a critical source of this deficiency after bump bonding trials, using SnAg bumps with solder flux, indium bumps, and SnAg bumps with a newly-introduced hydrogen-reflow process. With hydrogen-reflow, we establish flux-less bump bonding technology with SnAg bumps, appropriate for mass production of the flip-chip modules with thin sensors and thin ASICs.

AB - We have developed flip-chip modules applicable to the pixel detector for the HL-LHC. New radiation-tolerant n+-in-p planar pixel sensors of a size of four FE-I4 application-specific integrated circuits (ASICs) are laid out in a 6-in wafer. Variation in readout connection for the pixels at the boundary of ASICs is implemented in the design of quadsensors. Bump bonding technology is developed for four ASICs onto one quadsensor. Both sensors and ASICs are thinned to 150 μm before bump bonding, and are held flat with vacuum chucks. Using lead-free SnAg solder bumps, we encounter deficiency with large areas of disconnected bumps after thermal stress treatment, including irradiation. Surface oxidation of the solder bumps is identified as a critical source of this deficiency after bump bonding trials, using SnAg bumps with solder flux, indium bumps, and SnAg bumps with a newly-introduced hydrogen-reflow process. With hydrogen-reflow, we establish flux-less bump bonding technology with SnAg bumps, appropriate for mass production of the flip-chip modules with thin sensors and thin ASICs.

UR - http://www.scopus.com/inward/record.url?scp=85012037024&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85012037024&partnerID=8YFLogxK

U2 - 10.1088/1748-0221/12/01/C01084

DO - 10.1088/1748-0221/12/01/C01084

M3 - Article

AN - SCOPUS:85012037024

VL - 12

JO - Journal of Instrumentation

JF - Journal of Instrumentation

SN - 1748-0221

IS - 1

M1 - C01084

ER -