Development of silicon and carbon based p-type amorphous semiconductor films with optical gap variable for high-efficiency multi-junction solar cells

Hiroshi Naragino, Yoshiya Nagata, Keigo Okafuji, Shinpei Ohtomo, Yuta Shimizu, Kensuke Honda

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

P-type boron-doped amorphous silicon and carbon alloy (B-doped a-SixC1-x) thin films with wide optical gap selective from 1.80 to 2.50 eV were successfully deposited by radio frequency (r.f.) plasma-enhanced chemical vapor deposition (CVD) method using a mixed solution of tetramethylsilane (TMS) and trimethylborate (TMOB) as a liquid source. Optical gaps of the B-doped a-SixC1-x films could be controlled by changing Si/(C + Si) ratio of the film. From photo-electrochemical measurement under UV illumination, it was clarified that the B-doped a-SixC1-x film with an optical gap of 2.50 eV has the p-type semiconducting property and photoelectric conversion function with a quantum yield of 1.63 %. The rectifying action of a p-n heterojunction comprising p-type B-doped a-SixC1-x film and n-type Si (100) substrate was observed. The open circuit voltage (VOC) and short circuit current density (JSC) of the heterojunction were estimated to be 200 mV and 45 mA/cm2, respectively. The results indicate that p-type B-doped a-SixC1-x films with controllable optical gaps is a promising p-layer material for multi-junction solar cells.

Original languageEnglish
Title of host publicationEmerging Nanomaterials and Devices
EditorsH. Baumgart, H. Hahn, M. K. Orlowski, U. Schwalke, S. V. Rotkin, F. Kreupl, M. C. Lemme, Q. Li
PublisherElectrochemical Society Inc.
Pages153-159
Number of pages7
Edition13
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2016
Externally publishedYes
EventSymposium on Emerging Nanomaterials and Devices - PRiME 2016/230th ECS Meeting - Honolulu, United States
Duration: Oct 2 2016Oct 7 2016

Publication series

NameECS Transactions
Number13
Volume75
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceSymposium on Emerging Nanomaterials and Devices - PRiME 2016/230th ECS Meeting
CountryUnited States
CityHonolulu
Period10/2/1610/7/16

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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