X-ray topography system for in-situ observation of sublimation SiC single crystal growth has been developed. The feature of SiC single crystal growth inside a closed carbon crucible over 2200°C is captured in real time. The system will clarify the SiC growth mechanism, such as growth rate, defect generation and stress distribution in a growing crystal, depending on temperature, pressure and other parameters. These results will be useful to develop a high quality and large SiC single crystal wafer, and enhance the hard electronics technology.
|Number of pages||6|
|Journal||Denshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory|
|Publication status||Published - Dec 1 1999|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering