Development of X-ray topography system for in-situ observation of sublimation SiC single crystal growth

Shinichi Nishizawa, H. Yamaguchi, T. Kato, N. Oyanagi, S. Yoshida, K. Arai

Research output: Contribution to journalArticle

Abstract

X-ray topography system for in-situ observation of sublimation SiC single crystal growth has been developed. The feature of SiC single crystal growth inside a closed carbon crucible over 2200°C is captured in real time. The system will clarify the SiC growth mechanism, such as growth rate, defect generation and stress distribution in a growing crystal, depending on temperature, pressure and other parameters. These results will be useful to develop a high quality and large SiC single crystal wafer, and enhance the hard electronics technology.

Original languageEnglish
Pages (from-to)37-42
Number of pages6
JournalDenshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory
Volume63
Issue number8-9
Publication statusPublished - Dec 1 1999
Externally publishedYes

Fingerprint

Sublimation
sublimation
Crystal growth
Topography
crystal growth
topography
Single crystals
X rays
single crystals
x rays
Crucibles
crucibles
stress distribution
Stress concentration
Electronic equipment
wafers
Defects
Carbon
carbon
defects

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Development of X-ray topography system for in-situ observation of sublimation SiC single crystal growth. / Nishizawa, Shinichi; Yamaguchi, H.; Kato, T.; Oyanagi, N.; Yoshida, S.; Arai, K.

In: Denshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory, Vol. 63, No. 8-9, 01.12.1999, p. 37-42.

Research output: Contribution to journalArticle

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AU - Yoshida, S.

AU - Arai, K.

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