Abstract
X-ray topography system for in-situ observation of sublimation SiC single crystal growth has been developed. The feature of SiC single crystal growth inside a closed carbon crucible over 2200°C is captured in real time. The system will clarify the SiC growth mechanism, such as growth rate, defect generation and stress distribution in a growing crystal, depending on temperature, pressure and other parameters. These results will be useful to develop a high quality and large SiC single crystal wafer, and enhance the hard electronics technology.
| Original language | English |
|---|---|
| Pages (from-to) | 37-42 |
| Number of pages | 6 |
| Journal | Denshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory |
| Volume | 63 |
| Issue number | 8-9 |
| Publication status | Published - Dec 1 1999 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering