DFT modeling of AlN/GaN multi-quantum wells

Pawel Strak, Pawel Kempisty, Maria Ptasinska, Stanislaw Krukowski

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Density functional theory simulations have been used to obtain physical properties of AlN/GaN multi-quantum well (MQW) system characterized by equal width of wells and barriers. Such structure could have different thickness that affects their optical and electronic properties. For thickness up to 4 metal atomic layers, GaN region behaves as potential local minimum while for larger thickness it is a standard quantum well. Separation of an electron and hole wavefunction affects negatively radiative transition probabilities. Reduction of optical efficiency for systems with different structure width was determined by calculation of oscillator strength values. Field intensities along c-direction and the change of the energy of the optical transitions, due to quantum confined Stark effect (QCSE), were also obtained.

Original languageEnglish
Pages (from-to)323-326
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume10
Issue number3
DOIs
Publication statusPublished - Mar 1 2013
Externally publishedYes

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quantum wells
Stark effect
optical transition
oscillator strengths
transition probabilities
physical properties
density functional theory
optical properties
electronics
metals
electrons
simulation
energy

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Cite this

DFT modeling of AlN/GaN multi-quantum wells. / Strak, Pawel; Kempisty, Pawel; Ptasinska, Maria; Krukowski, Stanislaw.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 10, No. 3, 01.03.2013, p. 323-326.

Research output: Contribution to journalArticle

Strak, Pawel ; Kempisty, Pawel ; Ptasinska, Maria ; Krukowski, Stanislaw. / DFT modeling of AlN/GaN multi-quantum wells. In: Physica Status Solidi (C) Current Topics in Solid State Physics. 2013 ; Vol. 10, No. 3. pp. 323-326.
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