Diagnostic and analytical study on a low-pressure limit of diamond chemical vapor deposition in inductively coupled CO-CH4-H2 plasmas

Kungen Tsutsui, Masaru Hori, Toshio Goto

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The role of neutral radicals and charged ions in a low-pressure limit of plasma-enhanced chemical vapor deposition was studied using plasma diagonistics method. The fluxes of atomic hydrogen, methyl radicals, and ionic species were determined by optical absorption spectroscopy and mass spectroscopy. The ion-bombardment energy was estimated by measuring plasma potentials and ion energy distributions. The results show that the nucleation and the growth are limited by radical fluxes and modified to a degree by dynamic effects of energetic ions.

Original languageEnglish
Pages (from-to)4463-4470
Number of pages8
JournalJournal of Applied Physics
Volume95
Issue number8
DOIs
Publication statusPublished - Apr 15 2004

Fingerprint

low pressure
diamonds
vapor deposition
ions
plasma potentials
bombardment
absorption spectroscopy
energy distribution
optical absorption
mass spectroscopy
nucleation
hydrogen
spectroscopy
energy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Diagnostic and analytical study on a low-pressure limit of diamond chemical vapor deposition in inductively coupled CO-CH4-H2 plasmas. / Tsutsui, Kungen; Hori, Masaru; Goto, Toshio.

In: Journal of Applied Physics, Vol. 95, No. 8, 15.04.2004, p. 4463-4470.

Research output: Contribution to journalArticle

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