Diameter dependence of electron mobility in InGaAs nanowires

Jared J. Hou; Fengyun Wang; Ning Han; Haoshen Zhu; Kitwa Fok; Waichak Lam; Senpo Yip; Takfu Hung; Joshua E.Y. Lee; Johnny C. Ho

doi:10.1063/1.4794414

Diameter dependence of electron mobility in InGaAs nanowires

Jared J. Hou, Fengyun Wang, Ning Han, Haoshen Zhu, Kitwa Fok, Waichak Lam, Senpo Yip, Takfu Hung, Joshua E.Y. Lee, Johnny C. Ho

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

In this work, we present the diameter dependent electron mobility study of InGaAs nanowires (NWs) grown by gold-catalyzed vapor transport method. These single crystalline nanowires have an In-rich stoichiometry (i.e., In _0.7Ga_0.3As) with dispersed diameters from 15 to 55 nm. The current-voltage behaviors of fabricated nanowire field-effect transistors reveal that the aggressive scaling of nanowire diameter will induce a degradation of electron mobility, while low-temperature measurements further decouple the effects of surface/interface traps and phonon scattering, highlighting the impact of surface roughness scattering on the electron mobility. This work suggests a careful design consideration of nanowire dimension is required for achieving the optimal device performances.

Original language	English
Article number	093112
Journal	Applied Physics Letters
Volume	102
Issue number	9
DOIs	https://doi.org/10.1063/1.4794414
Publication status	Published - Mar 4 2013
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4794414

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title = "Diameter dependence of electron mobility in InGaAs nanowires",

abstract = "In this work, we present the diameter dependent electron mobility study of InGaAs nanowires (NWs) grown by gold-catalyzed vapor transport method. These single crystalline nanowires have an In-rich stoichiometry (i.e., In 0.7Ga0.3As) with dispersed diameters from 15 to 55 nm. The current-voltage behaviors of fabricated nanowire field-effect transistors reveal that the aggressive scaling of nanowire diameter will induce a degradation of electron mobility, while low-temperature measurements further decouple the effects of surface/interface traps and phonon scattering, highlighting the impact of surface roughness scattering on the electron mobility. This work suggests a careful design consideration of nanowire dimension is required for achieving the optimal device performances.",

author = "Hou, {Jared J.} and Fengyun Wang and Ning Han and Haoshen Zhu and Kitwa Fok and Waichak Lam and Senpo Yip and Takfu Hung and Lee, {Joshua E.Y.} and Ho, {Johnny C.}",

note = "Funding Information: This work was financially supported by the General Research Fund of the Research Grants Council of Hong Kong SAR, China, under Project Nos. CityU 101210 and CityU 101111, the National Natural Science Foundation of China (Grant No. 51202205), the Science Technology and Innovation Committee of Shenzhen Municipality (Grant No. JCYJ20120618140624228), and was supported by a grant from the Shenzhen Research Institute, City University of Hong Kong.",

year = "2013",

month = mar,

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doi = "10.1063/1.4794414",

language = "English",

volume = "102",

journal = "Applied Physics Letters",

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T1 - Diameter dependence of electron mobility in InGaAs nanowires

AU - Hou, Jared J.

AU - Wang, Fengyun

AU - Han, Ning

AU - Zhu, Haoshen

AU - Fok, Kitwa

AU - Lam, Waichak

AU - Yip, Senpo

AU - Hung, Takfu

AU - Lee, Joshua E.Y.

AU - Ho, Johnny C.

N1 - Funding Information: This work was financially supported by the General Research Fund of the Research Grants Council of Hong Kong SAR, China, under Project Nos. CityU 101210 and CityU 101111, the National Natural Science Foundation of China (Grant No. 51202205), the Science Technology and Innovation Committee of Shenzhen Municipality (Grant No. JCYJ20120618140624228), and was supported by a grant from the Shenzhen Research Institute, City University of Hong Kong.

PY - 2013/3/4

Y1 - 2013/3/4

N2 - In this work, we present the diameter dependent electron mobility study of InGaAs nanowires (NWs) grown by gold-catalyzed vapor transport method. These single crystalline nanowires have an In-rich stoichiometry (i.e., In 0.7Ga0.3As) with dispersed diameters from 15 to 55 nm. The current-voltage behaviors of fabricated nanowire field-effect transistors reveal that the aggressive scaling of nanowire diameter will induce a degradation of electron mobility, while low-temperature measurements further decouple the effects of surface/interface traps and phonon scattering, highlighting the impact of surface roughness scattering on the electron mobility. This work suggests a careful design consideration of nanowire dimension is required for achieving the optimal device performances.

AB - In this work, we present the diameter dependent electron mobility study of InGaAs nanowires (NWs) grown by gold-catalyzed vapor transport method. These single crystalline nanowires have an In-rich stoichiometry (i.e., In 0.7Ga0.3As) with dispersed diameters from 15 to 55 nm. The current-voltage behaviors of fabricated nanowire field-effect transistors reveal that the aggressive scaling of nanowire diameter will induce a degradation of electron mobility, while low-temperature measurements further decouple the effects of surface/interface traps and phonon scattering, highlighting the impact of surface roughness scattering on the electron mobility. This work suggests a careful design consideration of nanowire dimension is required for achieving the optimal device performances.

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JO - Applied Physics Letters

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IS - 9

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ER -

Diameter dependence of electron mobility in InGaAs nanowires

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