Diamond/β-Ga2O3pn heterojunction diodes fabricated by low-temperature direct-bonding

Phongsaphak Sittimart, Shinya Ohmagari, Takashi Matsumae, Hitoshi Umezawa, Tsuyoshi Yoshitake

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7 Citations (Scopus)


Heterojunctions consisting of p-type diamond substrates and thin exfoliated n-type β-Ga2O3 layers were fabricated at a low temperature using a direct-bonding technique. We have fabricated p+-diamond/n-Ga2O3 (p+-n) and p-diamond/n-Ga2O3 (p-n) structures with different B concentrations in diamond. The p+-n heterojunction exhibited Ohmic behavior, resulting from p+-diamond behaving as a metallic layer. As for the p-n heterojunction, it showed clear rectifying action as a conventional bipolar action with a rectifying ratio >108 at ±10 V and leakage current <10-12 A. The ideality factor and barrier height of the p-n heterojunctions were estimated to be 2.7 and 1.5 eV, respectively. Formation of the p-n junction was evidenced by comparing it with the Schottky junction. An energy band diagram of the p-n heterojunctions with staggered (type-II) band alignment was derived based on electrical investigations.

Original languageEnglish
Article number105114
JournalAIP Advances
Issue number10
Publication statusPublished - Oct 1 2021

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)


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