Diamond deposition and behavior of atomic carbon species in a low-pressure inductively coupled plasma

Haruhiko Ito, Kungen Teii, Masayuki Ishikawa, Masafumi Ito, Masaru Hori, Takashi Takeo, Terumasa Kato, Toshio Goto

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Abstract

Diamond was successfully synthesized by using H2-rich CH4/CO/H2 and H2-rich CH4/H2 inductively coupled plasma at a pressure of 11 Pa. The ratio of particle size to deposition time, as a criterion of the diamond growth rate, in H2-rich CH4/CO/H2 mixture gas plasmas was higher than that in H2-rich CH4/H2 mixture gas plasmas. The deposits in H2-rich CH4/H2 and H2-rich CH4/CO/H2 mixture gas plasmas were found to contain nondiamond phases, as confirmed by Raman spectroscopy. In order to investigate the mechanism involved in diamond formation, C-atom densities in the plasmas were measured by vacuum ultraviolet absorption spectroscopy with a carbon hollow cathode lamp. In addition, CH, OH and H-atom emission intensities were measured by optical emission spectroscopy. As a result, it was found that the C-atom densities increased considerably with increasing mixture ratio of CO to CH4. On the basis of the correlation between the quality of deposits and the C-atom densities, C-atoms were determined to probably contribute to the formation of nondiamond phases in the deposits.

Original languageEnglish
Pages (from-to)4504-4507
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume38
Issue number7 B
DOIs
Publication statusPublished - Jul 1999

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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