Diamond MOSFETs using 2D hole gas with 1700V breakdown voltage

H. Kawarada, T. Yamada, D. Xu, Y. Kitabayashi, M. Shibata, D. Matsumura, M. Kobayashi, T. Saito, T. Kudo, M. Inaba, A. Hiraiwa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

18 Citations (Scopus)

Abstract

More than 1600V breakdown voltages have been obtained in hydrogen terminated (C-H) diamond planar p-channel MOSFETs with gate-drain distance of 16-22 μm. The drain current density exceeds 100mA/mm in the FETs. The blocking voltage and drain current characteristics are comparable to those of n-channel AlGaN/GaN FETs and planar SiC MOSFETs in a similar device size. Atomic layer deposited Al2O3 works as gate insulator and passivation layer. It also induces the 2 dimensional hole gas ubiquitously on C-H diamond surface not only in planar, but in a trench gate structure. The first diamond vertical MOSFET has also operated using the trench structure.

Original languageEnglish
Title of host publicationProceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages483-486
Number of pages4
ISBN (Electronic)9781467387682
DOIs
Publication statusPublished - Jul 25 2016
Event28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016 - Prague, Czech Republic
Duration: Jun 12 2016Jun 16 2016

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
Volume2016-July
ISSN (Print)1063-6854

Conference

Conference28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016
CountryCzech Republic
CityPrague
Period6/12/166/16/16

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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  • Cite this

    Kawarada, H., Yamada, T., Xu, D., Kitabayashi, Y., Shibata, M., Matsumura, D., Kobayashi, M., Saito, T., Kudo, T., Inaba, M., & Hiraiwa, A. (2016). Diamond MOSFETs using 2D hole gas with 1700V breakdown voltage. In Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016 (pp. 483-486). [7520883] (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2016-July). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISPSD.2016.7520883