Diamond nucleation enhancement on Si by controlling ion-bombardment energy in electron cyclotron resonance plasma

Yutaka Kouzuma, Kungen Teii, Kiichiro Uchino, Katsunori Muraoka

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3 Citations (Scopus)

Abstract

A nucleation enhancement technique with defined ion-bombardment energies has been developed for diamond deposition on mirror-polished Si wafers. The substrate was negatively biased at several tens of volts in an electron cyclotron resonance methane-hydrogen plasma at 0.13 Pa. The nucleation density was significantly increased to ∼108 nuclei/cm2 for the bias voltage range of -20 to -50 V. The highest density was obtained with a mean ion energy of around 50 eV. The mechanism of nucleation enhancement was correlated with the formation of sp3 bonds as nucleation sites by energetic ion bombardment.

Original languageEnglish
Pages (from-to)5749-5750
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume41
Issue number9
Publication statusPublished - Sep 1 2002

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All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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