Diamond nucleation enhancement on Si by controlling ion-bombardment energy in electron cyclotron resonance plasma

Yutaka Kouzuma; Kungen Teii; Kiichiro Uchino; Katsunori Muraoka

doi:10.1143/jjap.41.5749

Diamond nucleation enhancement on Si by controlling ion-bombardment energy in electron cyclotron resonance plasma

Yutaka Kouzuma, Kungen Teii, Kiichiro Uchino, Katsunori Muraoka

Electrical Engineering Sciences

Research output: Contribution to journal › Article › peer-review

Abstract

A nucleation enhancement technique with defined ion-bombardment energies has been developed for diamond deposition on mirror-polished Si wafers. The substrate was negatively biased at several tens of volts in an electron cyclotron resonance methane-hydrogen plasma at 0.13 Pa. The nucleation density was significantly increased to ∼10⁸ nuclei/cm² for the bias voltage range of -20 to -50 V. The highest density was obtained with a mean ion energy of around 50 eV. The mechanism of nucleation enhancement was correlated with the formation of sp³ bonds as nucleation sites by energetic ion bombardment.

Original language	English
Pages (from-to)	5749-5750
Number of pages	2
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	41
Issue number	9
DOIs	https://doi.org/10.1143/jjap.41.5749
Publication status	Published - Sept 2002

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/jjap.41.5749

Cite this

Diamond nucleation enhancement on Si by controlling ion-bombardment energy in electron cyclotron resonance plasma. / Kouzuma, Yutaka; Teii, Kungen; Uchino, Kiichiro et al.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 41, No. 9, 09.2002, p. 5749-5750.

Research output: Contribution to journal › Article › peer-review

@article{615454768a2a44f894da455669511ddb,

title = "Diamond nucleation enhancement on Si by controlling ion-bombardment energy in electron cyclotron resonance plasma",

abstract = "A nucleation enhancement technique with defined ion-bombardment energies has been developed for diamond deposition on mirror-polished Si wafers. The substrate was negatively biased at several tens of volts in an electron cyclotron resonance methane-hydrogen plasma at 0.13 Pa. The nucleation density was significantly increased to ∼108 nuclei/cm2 for the bias voltage range of -20 to -50 V. The highest density was obtained with a mean ion energy of around 50 eV. The mechanism of nucleation enhancement was correlated with the formation of sp3 bonds as nucleation sites by energetic ion bombardment.",

author = "Yutaka Kouzuma and Kungen Teii and Kiichiro Uchino and Katsunori Muraoka",

year = "2002",

month = sep,

doi = "10.1143/jjap.41.5749",

language = "English",

volume = "41",

pages = "5749--5750",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Institute of Physics",

number = "9",

}

TY - JOUR

T1 - Diamond nucleation enhancement on Si by controlling ion-bombardment energy in electron cyclotron resonance plasma

AU - Kouzuma, Yutaka

AU - Teii, Kungen

AU - Uchino, Kiichiro

AU - Muraoka, Katsunori

PY - 2002/9

Y1 - 2002/9

N2 - A nucleation enhancement technique with defined ion-bombardment energies has been developed for diamond deposition on mirror-polished Si wafers. The substrate was negatively biased at several tens of volts in an electron cyclotron resonance methane-hydrogen plasma at 0.13 Pa. The nucleation density was significantly increased to ∼108 nuclei/cm2 for the bias voltage range of -20 to -50 V. The highest density was obtained with a mean ion energy of around 50 eV. The mechanism of nucleation enhancement was correlated with the formation of sp3 bonds as nucleation sites by energetic ion bombardment.

AB - A nucleation enhancement technique with defined ion-bombardment energies has been developed for diamond deposition on mirror-polished Si wafers. The substrate was negatively biased at several tens of volts in an electron cyclotron resonance methane-hydrogen plasma at 0.13 Pa. The nucleation density was significantly increased to ∼108 nuclei/cm2 for the bias voltage range of -20 to -50 V. The highest density was obtained with a mean ion energy of around 50 eV. The mechanism of nucleation enhancement was correlated with the formation of sp3 bonds as nucleation sites by energetic ion bombardment.

UR - http://www.scopus.com/inward/record.url?scp=0036757950&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036757950&partnerID=8YFLogxK

U2 - 10.1143/jjap.41.5749

DO - 10.1143/jjap.41.5749

M3 - Article

AN - SCOPUS:0036757950

SN - 0021-4922

VL - 41

SP - 5749

EP - 5750

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 9

ER -

Diamond nucleation enhancement on Si by controlling ion-bombardment energy in electron cyclotron resonance plasma

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this