TY - GEN
T1 - Diamond power devices - Possbility of high voltage applicatios
AU - Yamasaki, S.
AU - Matsumoto, T.
AU - Oyama, K.
AU - Kato, H.
AU - Ogura, M.
AU - Takeuchi, D.
AU - Makino, T.
AU - Nishizawa, S.
AU - Oohash, H.
AU - Okushi, H.
PY - 2011
Y1 - 2011
N2 - As widely known, diamond has a higher break-down voltage than other semiconductor materials, 30 times than silicon and 3 times than silicon-carbide. Because of its superior property, diamond has a high potential of high voltage power devices. In addition diamond has unique properties, namely transport property of heavily doped material over 10 20 cm -3, high density exciton being stable even at room temperature, negative electron affinity with hydrogen terminated surface, etc. We have fabricated diamond devices using these properties, such as ultraviolet light emitting diodes, a new type of diode with high breakdown voltage and low ON resistance, high current density flow diode using heavily doped layers, and so on. In this key note lecture, we show the recent achievements of these electronic devices and discuss the potential of diamond semiconductor as a high voltage power device.
AB - As widely known, diamond has a higher break-down voltage than other semiconductor materials, 30 times than silicon and 3 times than silicon-carbide. Because of its superior property, diamond has a high potential of high voltage power devices. In addition diamond has unique properties, namely transport property of heavily doped material over 10 20 cm -3, high density exciton being stable even at room temperature, negative electron affinity with hydrogen terminated surface, etc. We have fabricated diamond devices using these properties, such as ultraviolet light emitting diodes, a new type of diode with high breakdown voltage and low ON resistance, high current density flow diode using heavily doped layers, and so on. In this key note lecture, we show the recent achievements of these electronic devices and discuss the potential of diamond semiconductor as a high voltage power device.
UR - http://www.scopus.com/inward/record.url?scp=84856732700&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84856732700&partnerID=8YFLogxK
U2 - 10.1109/ICEPE-ST.2011.6123021
DO - 10.1109/ICEPE-ST.2011.6123021
M3 - Conference contribution
AN - SCOPUS:84856732700
SN - 9781457712722
T3 - 2011 1st International Conference on Electric Power Equipment - Switching Technology, ICEPE2011 - Proceedings
SP - 418
EP - 420
BT - 2011 1st International Conference on Electric Power Equipment - Switching Technology, ICEPE2011 - Proceedings
T2 - 2011 1st International Conference on Electric Power Equipment - Switching Technology, ICEPE2011
Y2 - 23 October 2011 through 27 October 2011
ER -