Diamond power devices - Possbility of high voltage applicatios

S. Yamasaki, T. Matsumoto, K. Oyama, H. Kato, M. Ogura, D. Takeuchi, T. Makino, S. Nishizawa, H. Oohash, H. Okushi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

As widely known, diamond has a higher break-down voltage than other semiconductor materials, 30 times than silicon and 3 times than silicon-carbide. Because of its superior property, diamond has a high potential of high voltage power devices. In addition diamond has unique properties, namely transport property of heavily doped material over 10 20 cm -3, high density exciton being stable even at room temperature, negative electron affinity with hydrogen terminated surface, etc. We have fabricated diamond devices using these properties, such as ultraviolet light emitting diodes, a new type of diode with high breakdown voltage and low ON resistance, high current density flow diode using heavily doped layers, and so on. In this key note lecture, we show the recent achievements of these electronic devices and discuss the potential of diamond semiconductor as a high voltage power device.

Original languageEnglish
Title of host publication2011 1st International Conference on Electric Power Equipment - Switching Technology, ICEPE2011 - Proceedings
Pages418-420
Number of pages3
DOIs
Publication statusPublished - 2011
Externally publishedYes
Event2011 1st International Conference on Electric Power Equipment - Switching Technology, ICEPE2011 - Xi'an, China
Duration: Oct 23 2011Oct 27 2011

Publication series

Name2011 1st International Conference on Electric Power Equipment - Switching Technology, ICEPE2011 - Proceedings

Other

Other2011 1st International Conference on Electric Power Equipment - Switching Technology, ICEPE2011
CountryChina
CityXi'an
Period10/23/1110/27/11

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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