Dielectric loss tangent of sapphire single crystal produced by edge-defined film-fed growth method

M. Kusunoki; M. Inadomaru; S. Ohshima; K. Aizawa; Masashi Mukaida; M. Lorenz; H. Hochmuth

doi:10.1016/S0921-4534(01)01282-5

Dielectric loss tangent of sapphire single crystal produced by edge-defined film-fed growth method

M. Kusunoki, M. Inadomaru, S. Ohshima, K. Aizawa, Masashi Mukaida, M. Lorenz, H. Hochmuth

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

We investigated the dielectric loss tangent (tan δ) of sapphire single crystals produced by edge-defined film-fed growth (EFG) method using a dielectric resonator with YBa₂Cu₃O_y (YBCO) films. Surface resistance (R_s) of the YBCO film was low enough to obtain high resolution of tan δ measurement. For comparison, tan δ of the sapphire prepared by the Czochralsky (Cz) method was also evaluated. Measurements of 14 sapphire rods showed that EFG sapphire tends to have lower tan δ than Cz sapphire, while defects in Cz crystal were 1/14-1/2 less than that in EFG crystal. It means that the number of defects does not influence tan δ, if the density of defects is within the order of 10⁴/cm². In most EFG sapphire the value of tan δ at 30 K was estimated to be <1.0 × 10^-7. It is usable for R_s measurement of high critical temperature superconducting materials.

Original language	English
Pages (from-to)	313-318
Number of pages	6
Journal	Physica C: Superconductivity and its Applications
Volume	377
Issue number	3
DOIs	https://doi.org/10.1016/S0921-4534(01)01282-5
Publication status	Published - Sept 15 2002
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Energy Engineering and Power Technology
Electrical and Electronic Engineering

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10.1016/S0921-4534(01)01282-5

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title = "Dielectric loss tangent of sapphire single crystal produced by edge-defined film-fed growth method",

abstract = "We investigated the dielectric loss tangent (tan δ) of sapphire single crystals produced by edge-defined film-fed growth (EFG) method using a dielectric resonator with YBa2Cu3Oy (YBCO) films. Surface resistance (Rs) of the YBCO film was low enough to obtain high resolution of tan δ measurement. For comparison, tan δ of the sapphire prepared by the Czochralsky (Cz) method was also evaluated. Measurements of 14 sapphire rods showed that EFG sapphire tends to have lower tan δ than Cz sapphire, while defects in Cz crystal were 1/14-1/2 less than that in EFG crystal. It means that the number of defects does not influence tan δ, if the density of defects is within the order of 104/cm2. In most EFG sapphire the value of tan δ at 30 K was estimated to be <1.0 × 10-7. It is usable for Rs measurement of high critical temperature superconducting materials.",

author = "M. Kusunoki and M. Inadomaru and S. Ohshima and K. Aizawa and Masashi Mukaida and M. Lorenz and H. Hochmuth",

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T1 - Dielectric loss tangent of sapphire single crystal produced by edge-defined film-fed growth method

AU - Kusunoki, M.

AU - Inadomaru, M.

AU - Ohshima, S.

AU - Aizawa, K.

AU - Mukaida, Masashi

AU - Lorenz, M.

AU - Hochmuth, H.

PY - 2002/9/15

Y1 - 2002/9/15

N2 - We investigated the dielectric loss tangent (tan δ) of sapphire single crystals produced by edge-defined film-fed growth (EFG) method using a dielectric resonator with YBa2Cu3Oy (YBCO) films. Surface resistance (Rs) of the YBCO film was low enough to obtain high resolution of tan δ measurement. For comparison, tan δ of the sapphire prepared by the Czochralsky (Cz) method was also evaluated. Measurements of 14 sapphire rods showed that EFG sapphire tends to have lower tan δ than Cz sapphire, while defects in Cz crystal were 1/14-1/2 less than that in EFG crystal. It means that the number of defects does not influence tan δ, if the density of defects is within the order of 104/cm2. In most EFG sapphire the value of tan δ at 30 K was estimated to be <1.0 × 10-7. It is usable for Rs measurement of high critical temperature superconducting materials.

AB - We investigated the dielectric loss tangent (tan δ) of sapphire single crystals produced by edge-defined film-fed growth (EFG) method using a dielectric resonator with YBa2Cu3Oy (YBCO) films. Surface resistance (Rs) of the YBCO film was low enough to obtain high resolution of tan δ measurement. For comparison, tan δ of the sapphire prepared by the Czochralsky (Cz) method was also evaluated. Measurements of 14 sapphire rods showed that EFG sapphire tends to have lower tan δ than Cz sapphire, while defects in Cz crystal were 1/14-1/2 less than that in EFG crystal. It means that the number of defects does not influence tan δ, if the density of defects is within the order of 104/cm2. In most EFG sapphire the value of tan δ at 30 K was estimated to be <1.0 × 10-7. It is usable for Rs measurement of high critical temperature superconducting materials.

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DO - 10.1016/S0921-4534(01)01282-5

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SN - 0921-4534

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JO - Physica C: Superconductivity and its Applications

JF - Physica C: Superconductivity and its Applications

IS - 3

ER -

Dielectric loss tangent of sapphire single crystal produced by edge-defined film-fed growth method

Abstract

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