Dielectric loss tangent of sapphire single crystal produced by edge-defined film-fed growth method

M. Kusunoki, M. Inadomaru, S. Ohshima, K. Aizawa, Masashi Mukaida, M. Lorenz, H. Hochmuth

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

We investigated the dielectric loss tangent (tan δ) of sapphire single crystals produced by edge-defined film-fed growth (EFG) method using a dielectric resonator with YBa2Cu3Oy (YBCO) films. Surface resistance (Rs) of the YBCO film was low enough to obtain high resolution of tan δ measurement. For comparison, tan δ of the sapphire prepared by the Czochralsky (Cz) method was also evaluated. Measurements of 14 sapphire rods showed that EFG sapphire tends to have lower tan δ than Cz sapphire, while defects in Cz crystal were 1/14-1/2 less than that in EFG crystal. It means that the number of defects does not influence tan δ, if the density of defects is within the order of 104/cm2. In most EFG sapphire the value of tan δ at 30 K was estimated to be <1.0 × 10-7. It is usable for Rs measurement of high critical temperature superconducting materials.

Original languageEnglish
Pages (from-to)313-318
Number of pages6
JournalPhysica C: Superconductivity and its Applications
Volume377
Issue number3
DOIs
Publication statusPublished - Sep 15 2002
Externally publishedYes

Fingerprint

Aluminum Oxide
Dielectric losses
tangents
dielectric loss
Sapphire
sapphire
Single crystals
single crystals
Defects
defects
Surface resistance
Dielectric resonators
Crystallization
Crystal growth
Superconducting materials
crystal growth
critical temperature
rods
resonators
Crystals

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

Cite this

Dielectric loss tangent of sapphire single crystal produced by edge-defined film-fed growth method. / Kusunoki, M.; Inadomaru, M.; Ohshima, S.; Aizawa, K.; Mukaida, Masashi; Lorenz, M.; Hochmuth, H.

In: Physica C: Superconductivity and its Applications, Vol. 377, No. 3, 15.09.2002, p. 313-318.

Research output: Contribution to journalArticle

Kusunoki, M. ; Inadomaru, M. ; Ohshima, S. ; Aizawa, K. ; Mukaida, Masashi ; Lorenz, M. ; Hochmuth, H. / Dielectric loss tangent of sapphire single crystal produced by edge-defined film-fed growth method. In: Physica C: Superconductivity and its Applications. 2002 ; Vol. 377, No. 3. pp. 313-318.
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