MnO 2 slurry can polish SiO 2 film faster and planarize wide feature steps (2 × 2 mm 2) to a lower height than conventional silica slurry. A comparison of Gibbs free energies indicates that the MnO 2 abrasive directly reacts on the SiO 2 film. In post-Chemical mechanical polishing (CMP), the MnO 2 abrasive can be completely removed by dipping it in mixed solutions of inorganic acids and H 2O 2 followed by scrubbing and dipping in HF solution. A comparison of Gibbs free energies clarifies that the MnO 2 abrasive on the wafer is easily dissolved in a mixed solution of an inorganic acid and H 2O 2.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)