Dielectric SiO 2 planarization using MnO 2 slurry

Sadahiro Kishii, Ko Nakamura, Kenzo Hanawa, Satoru Watanabe, Yoshihiro Arimoto, Syuhei Kurokawa, Toshiro K. Doi

Research output: Contribution to journalArticlepeer-review

Abstract

MnO 2 slurry can polish SiO 2 film faster and planarize wide feature steps (2 × 2 mm 2) to a lower height than conventional silica slurry. A comparison of Gibbs free energies indicates that the MnO 2 abrasive directly reacts on the SiO 2 film. In post-Chemical mechanical polishing (CMP), the MnO 2 abrasive can be completely removed by dipping it in mixed solutions of inorganic acids and H 2O 2 followed by scrubbing and dipping in HF solution. A comparison of Gibbs free energies clarifies that the MnO 2 abrasive on the wafer is easily dissolved in a mixed solution of an inorganic acid and H 2O 2.

Original languageEnglish
Article number016501
JournalJapanese journal of applied physics
Volume51
Issue number1
DOIs
Publication statusPublished - Jan 1 2012

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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