Dielectric SiO 2 planarization using MnO 2 slurry

Sadahiro Kishii, Ko Nakamura, Kenzo Hanawa, Satoru Watanabe, Yoshihiro Arimoto, Syuhei Kurokawa, Toshiro K. Doi

Research output: Contribution to journalArticle

Abstract

MnO 2 slurry can polish SiO 2 film faster and planarize wide feature steps (2 × 2 mm 2) to a lower height than conventional silica slurry. A comparison of Gibbs free energies indicates that the MnO 2 abrasive directly reacts on the SiO 2 film. In post-Chemical mechanical polishing (CMP), the MnO 2 abrasive can be completely removed by dipping it in mixed solutions of inorganic acids and H 2O 2 followed by scrubbing and dipping in HF solution. A comparison of Gibbs free energies clarifies that the MnO 2 abrasive on the wafer is easily dissolved in a mixed solution of an inorganic acid and H 2O 2.

Original languageEnglish
Article number016501
JournalJapanese journal of applied physics
Volume51
Issue number1
DOIs
Publication statusPublished - Jan 1 2012

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abrasives
Abrasives
Inorganic acids
Gibbs free energy
dipping
Hydrogen
acids
Chemical mechanical polishing
washing
polishing
Silica
wafers
silicon dioxide

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Kishii, S., Nakamura, K., Hanawa, K., Watanabe, S., Arimoto, Y., Kurokawa, S., & Doi, T. K. (2012). Dielectric SiO 2 planarization using MnO 2 slurry. Japanese journal of applied physics, 51(1), [016501]. https://doi.org/10.1143/JJAP.51.016501

Dielectric SiO 2 planarization using MnO 2 slurry. / Kishii, Sadahiro; Nakamura, Ko; Hanawa, Kenzo; Watanabe, Satoru; Arimoto, Yoshihiro; Kurokawa, Syuhei; Doi, Toshiro K.

In: Japanese journal of applied physics, Vol. 51, No. 1, 016501, 01.01.2012.

Research output: Contribution to journalArticle

Kishii, S, Nakamura, K, Hanawa, K, Watanabe, S, Arimoto, Y, Kurokawa, S & Doi, TK 2012, 'Dielectric SiO 2 planarization using MnO 2 slurry', Japanese journal of applied physics, vol. 51, no. 1, 016501. https://doi.org/10.1143/JJAP.51.016501
Kishii S, Nakamura K, Hanawa K, Watanabe S, Arimoto Y, Kurokawa S et al. Dielectric SiO 2 planarization using MnO 2 slurry. Japanese journal of applied physics. 2012 Jan 1;51(1). 016501. https://doi.org/10.1143/JJAP.51.016501
Kishii, Sadahiro ; Nakamura, Ko ; Hanawa, Kenzo ; Watanabe, Satoru ; Arimoto, Yoshihiro ; Kurokawa, Syuhei ; Doi, Toshiro K. / Dielectric SiO 2 planarization using MnO 2 slurry. In: Japanese journal of applied physics. 2012 ; Vol. 51, No. 1.
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