Diffusion and electrical properties of 3d transition-metal impurity series in silicon

Hiroshi Nakashima, Taizoh Sadoh, H. Kitagawa, K. Hashimoto

Research output: Contribution to journalConference article

39 Citations (Scopus)

Abstract

Diffusion and electrical properties from Ti to Ni in Si have been comprehensively investigated by deep level transient spectroscopy (DLTS) and the Hall effect. Electrically active components from Ti to Fe are assigned to be interstitial species, and DLTS results reveal double donors and an acceptor except for Cr and Fe which exhibit only one donor state. For Cr, Mn, and Fe, pairs of the donors with B, acting as donors, are also detected by DLTS. Diffusivities D of these elements are determined in the wide temperature range from room temperature to high temperature. The results show a clear trend that D increases with increasing atomic numbers. By contrast, electrically active components of Co and Ni are assigned to be substitutional species. These active components, only a small fraction of total Co or Ni, have an amphoteric nature in n- and p-type Si. We present the chemical trends of the diffusion and electrical properties with a comparative manner.

Original languageEnglish
Pages (from-to)761-766
Number of pages6
JournalMaterials Science Forum
Volume143-4
Issue numberpt 2
Publication statusPublished - Dec 1 1994
EventProceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3) - Gmunden, Austria
Duration: Jul 18 1993Jul 23 1993

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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