Diffusion and trapping of tritium in vanadium alloys

J. Masuda, Kenichi Hashizume, T. Otsuka, T. Tanabe, Y. Hatano, Y. Nakamura, T. Nagasaka, T. Muroga

    Research output: Contribution to journalArticle

    12 Citations (Scopus)

    Abstract

    Tritium diffusion in a vanadium alloy (V-4Cr-4Ti) has been investigated at temperatures ranging from 230 K to 573 K. Tritium was loaded into the surface layers of the alloy specimen with an ac-glow discharge. Before and after diffusion annealing of the specimen, tritium diffusion profiles were measured by means of an imaging plate (IP) technique. Tritium diffusion coefficients (DT), which were evaluated by fitting a numerical solution of the diffusion geometry employed here to the obtained diffusion profiles, were a little smaller than those for pure V with the activation energy of 0.13 ± 0.01 eV. Below 320 K, in addition, the Arrhenius plot of DT bent downwards showing a larger activation energy of 0.19 ± 0.01 eV, probably owing to the trapping effect of both of Cr and Ti. The effect of alloying elements on tritium diffusion and the influence of tritium release from the surface were discussed.

    Original languageEnglish
    Pages (from-to)1256-1260
    Number of pages5
    JournalJournal of Nuclear Materials
    Volume363-365
    Issue number1-3
    DOIs
    Publication statusPublished - Jun 15 2007

    Fingerprint

    vanadium alloys
    Vanadium alloys
    Tritium
    tritium
    trapping
    activation energy
    Activation energy
    Arrhenius plots
    profiles
    glow discharges
    Glow discharges
    alloying
    Alloying elements
    surface layers
    diffusion coefficient
    plots
    Annealing
    annealing
    Imaging techniques
    geometry

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials

    Cite this

    Masuda, J., Hashizume, K., Otsuka, T., Tanabe, T., Hatano, Y., Nakamura, Y., ... Muroga, T. (2007). Diffusion and trapping of tritium in vanadium alloys. Journal of Nuclear Materials, 363-365(1-3), 1256-1260. https://doi.org/10.1016/j.jnucmat.2007.01.176

    Diffusion and trapping of tritium in vanadium alloys. / Masuda, J.; Hashizume, Kenichi; Otsuka, T.; Tanabe, T.; Hatano, Y.; Nakamura, Y.; Nagasaka, T.; Muroga, T.

    In: Journal of Nuclear Materials, Vol. 363-365, No. 1-3, 15.06.2007, p. 1256-1260.

    Research output: Contribution to journalArticle

    Masuda, J, Hashizume, K, Otsuka, T, Tanabe, T, Hatano, Y, Nakamura, Y, Nagasaka, T & Muroga, T 2007, 'Diffusion and trapping of tritium in vanadium alloys', Journal of Nuclear Materials, vol. 363-365, no. 1-3, pp. 1256-1260. https://doi.org/10.1016/j.jnucmat.2007.01.176
    Masuda J, Hashizume K, Otsuka T, Tanabe T, Hatano Y, Nakamura Y et al. Diffusion and trapping of tritium in vanadium alloys. Journal of Nuclear Materials. 2007 Jun 15;363-365(1-3):1256-1260. https://doi.org/10.1016/j.jnucmat.2007.01.176
    Masuda, J. ; Hashizume, Kenichi ; Otsuka, T. ; Tanabe, T. ; Hatano, Y. ; Nakamura, Y. ; Nagasaka, T. ; Muroga, T. / Diffusion and trapping of tritium in vanadium alloys. In: Journal of Nuclear Materials. 2007 ; Vol. 363-365, No. 1-3. pp. 1256-1260.
    @article{8592678c596f4145a056b4cc0338840a,
    title = "Diffusion and trapping of tritium in vanadium alloys",
    abstract = "Tritium diffusion in a vanadium alloy (V-4Cr-4Ti) has been investigated at temperatures ranging from 230 K to 573 K. Tritium was loaded into the surface layers of the alloy specimen with an ac-glow discharge. Before and after diffusion annealing of the specimen, tritium diffusion profiles were measured by means of an imaging plate (IP) technique. Tritium diffusion coefficients (DT), which were evaluated by fitting a numerical solution of the diffusion geometry employed here to the obtained diffusion profiles, were a little smaller than those for pure V with the activation energy of 0.13 ± 0.01 eV. Below 320 K, in addition, the Arrhenius plot of DT bent downwards showing a larger activation energy of 0.19 ± 0.01 eV, probably owing to the trapping effect of both of Cr and Ti. The effect of alloying elements on tritium diffusion and the influence of tritium release from the surface were discussed.",
    author = "J. Masuda and Kenichi Hashizume and T. Otsuka and T. Tanabe and Y. Hatano and Y. Nakamura and T. Nagasaka and T. Muroga",
    year = "2007",
    month = "6",
    day = "15",
    doi = "10.1016/j.jnucmat.2007.01.176",
    language = "English",
    volume = "363-365",
    pages = "1256--1260",
    journal = "Journal of Nuclear Materials",
    issn = "0022-3115",
    publisher = "Elsevier",
    number = "1-3",

    }

    TY - JOUR

    T1 - Diffusion and trapping of tritium in vanadium alloys

    AU - Masuda, J.

    AU - Hashizume, Kenichi

    AU - Otsuka, T.

    AU - Tanabe, T.

    AU - Hatano, Y.

    AU - Nakamura, Y.

    AU - Nagasaka, T.

    AU - Muroga, T.

    PY - 2007/6/15

    Y1 - 2007/6/15

    N2 - Tritium diffusion in a vanadium alloy (V-4Cr-4Ti) has been investigated at temperatures ranging from 230 K to 573 K. Tritium was loaded into the surface layers of the alloy specimen with an ac-glow discharge. Before and after diffusion annealing of the specimen, tritium diffusion profiles were measured by means of an imaging plate (IP) technique. Tritium diffusion coefficients (DT), which were evaluated by fitting a numerical solution of the diffusion geometry employed here to the obtained diffusion profiles, were a little smaller than those for pure V with the activation energy of 0.13 ± 0.01 eV. Below 320 K, in addition, the Arrhenius plot of DT bent downwards showing a larger activation energy of 0.19 ± 0.01 eV, probably owing to the trapping effect of both of Cr and Ti. The effect of alloying elements on tritium diffusion and the influence of tritium release from the surface were discussed.

    AB - Tritium diffusion in a vanadium alloy (V-4Cr-4Ti) has been investigated at temperatures ranging from 230 K to 573 K. Tritium was loaded into the surface layers of the alloy specimen with an ac-glow discharge. Before and after diffusion annealing of the specimen, tritium diffusion profiles were measured by means of an imaging plate (IP) technique. Tritium diffusion coefficients (DT), which were evaluated by fitting a numerical solution of the diffusion geometry employed here to the obtained diffusion profiles, were a little smaller than those for pure V with the activation energy of 0.13 ± 0.01 eV. Below 320 K, in addition, the Arrhenius plot of DT bent downwards showing a larger activation energy of 0.19 ± 0.01 eV, probably owing to the trapping effect of both of Cr and Ti. The effect of alloying elements on tritium diffusion and the influence of tritium release from the surface were discussed.

    UR - http://www.scopus.com/inward/record.url?scp=34248548837&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=34248548837&partnerID=8YFLogxK

    U2 - 10.1016/j.jnucmat.2007.01.176

    DO - 10.1016/j.jnucmat.2007.01.176

    M3 - Article

    VL - 363-365

    SP - 1256

    EP - 1260

    JO - Journal of Nuclear Materials

    JF - Journal of Nuclear Materials

    SN - 0022-3115

    IS - 1-3

    ER -