Diffusion coefficient of interstitial iron in silicon

Takashi Isobe; Hiroshi Nakashima; Kimio Hashimoto

doi:10.1143/JJAP.28.1282

Diffusion coefficient of interstitial iron in silicon

Takashi Isobe, Hiroshi Nakashima, Kimio Hashimoto

Research output: Contribution to journal › Article › peer-review

34 Citations (Scopus)

Abstract

The in-depth profiles of iron in silicon diffused with iron at 800, 900, 1000 and 1070°C were investigated by DLTS measurements. The diffusion coefficient of interstitial iron in silicon was represented by the expression D_Fe=9.5×10^-4 exp(-0.65/kT) cm²s^-1 in the temperature range of 800-1070°C.

Original language	English
Pages (from-to)	1282-1283
Number of pages	2
Journal	Japanese Journal of Applied Physics
Volume	28
Issue number	7 R
DOIs	https://doi.org/10.1143/JJAP.28.1282
Publication status	Published - Jul 1989

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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title = "Diffusion coefficient of interstitial iron in silicon",

abstract = "The in-depth profiles of iron in silicon diffused with iron at 800, 900, 1000 and 1070°C were investigated by DLTS measurements. The diffusion coefficient of interstitial iron in silicon was represented by the expression DFe=9.5×10-4 exp(-0.65/kT) cm2s-1 in the temperature range of 800-1070°C.",

author = "Takashi Isobe and Hiroshi Nakashima and Kimio Hashimoto",

year = "1989",

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AB - The in-depth profiles of iron in silicon diffused with iron at 800, 900, 1000 and 1070°C were investigated by DLTS measurements. The diffusion coefficient of interstitial iron in silicon was represented by the expression DFe=9.5×10-4 exp(-0.65/kT) cm2s-1 in the temperature range of 800-1070°C.

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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