TY - JOUR
T1 - Diffusion coefficient of interstitial iron in silicon
AU - Isobe, Takashi
AU - Nakashima, Hiroshi
AU - Hashimoto, Kimio
PY - 1989/7
Y1 - 1989/7
N2 - The in-depth profiles of iron in silicon diffused with iron at 800, 900, 1000 and 1070°C were investigated by DLTS measurements. The diffusion coefficient of interstitial iron in silicon was represented by the expression DFe=9.5×10-4 exp(-0.65/kT) cm2s-1 in the temperature range of 800-1070°C.
AB - The in-depth profiles of iron in silicon diffused with iron at 800, 900, 1000 and 1070°C were investigated by DLTS measurements. The diffusion coefficient of interstitial iron in silicon was represented by the expression DFe=9.5×10-4 exp(-0.65/kT) cm2s-1 in the temperature range of 800-1070°C.
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U2 - 10.1143/JJAP.28.1282
DO - 10.1143/JJAP.28.1282
M3 - Article
AN - SCOPUS:0024702647
VL - 28
SP - 1282
EP - 1283
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 7 R
ER -