Diffusion coefficient of interstitial iron in silicon

Takashi Isobe; Hiroshi Nakashima; Kimio Hashimoto

doi:10.1143/JJAP.28.1282

Diffusion coefficient of interstitial iron in silicon

Takashi Isobe, Hiroshi Nakashima, Kimio Hashimoto

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31 Citations (Scopus)

Abstract

The in-depth profiles of iron in silicon diffused with iron at 800, 900, 1000 and 1070°C were investigated by DLTS measurements. The diffusion coefficient of interstitial iron in silicon was represented by the expression D_Fe=9.5×10^-4 exp(-0.65/kT) cm²s^-1 in the temperature range of 800-1070°C.

Original language	English
Pages (from-to)	1282-1283
Number of pages	2
Journal	Japanese Journal of Applied Physics
Volume	28
Issue number	7 R
DOIs	https://doi.org/10.1143/JJAP.28.1282
Publication status	Published - Jul 1989

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All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

Cite this

Isobe, T., Nakashima, H., & Hashimoto, K. (1989). Diffusion coefficient of interstitial iron in silicon. Japanese Journal of Applied Physics, 28(7 R), 1282-1283. https://doi.org/10.1143/JJAP.28.1282

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Access to Document

10.1143/JJAP.28.1282