TY - JOUR
T1 - Diffusion coefficient of iron in silicon at room temperature
AU - Nakashima, Hiroshi
AU - Isobe, Takashi
AU - Yamamoto, Yuhide
AU - Hashimoto, Kimio
PY - 1988/8
Y1 - 1988/8
N2 - The pairing reaction of interstitial iron and substitutional boron for samples diffused with iron into boron-doped p-type silicon was studied by measuring the concentration of interstitial iron by DLTS as a function of the storage time at the temperatures of 0, 27, 42, 57 and 72°C. The diffusion coefficient of interstitial iron in silicon was determined at the temperature range between 0 and 72°C. The diffusion coefficient was represented by the expression DFe=3.3×10-1 exp(-0.81/kT)cm2s-1.
AB - The pairing reaction of interstitial iron and substitutional boron for samples diffused with iron into boron-doped p-type silicon was studied by measuring the concentration of interstitial iron by DLTS as a function of the storage time at the temperatures of 0, 27, 42, 57 and 72°C. The diffusion coefficient of interstitial iron in silicon was determined at the temperature range between 0 and 72°C. The diffusion coefficient was represented by the expression DFe=3.3×10-1 exp(-0.81/kT)cm2s-1.
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U2 - 10.1143/JJAP.27.1542
DO - 10.1143/JJAP.27.1542
M3 - Article
AN - SCOPUS:0024055634
SN - 0021-4922
VL - 27
SP - 1542
EP - 1543
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 8 R
ER -