Diffusion coefficient of iron in silicon at room temperature

Hiroshi Nakashima, Takashi Isobe, Yuhide Yamamoto, Kimio Hashimoto

    Research output: Contribution to journalArticle

    41 Citations (Scopus)

    Abstract

    The pairing reaction of interstitial iron and substitutional boron for samples diffused with iron into boron-doped p-type silicon was studied by measuring the concentration of interstitial iron by DLTS as a function of the storage time at the temperatures of 0, 27, 42, 57 and 72°C. The diffusion coefficient of interstitial iron in silicon was determined at the temperature range between 0 and 72°C. The diffusion coefficient was represented by the expression DFe=3.3×10-1 exp(-0.81/kT)cm2s-1.

    Original languageEnglish
    Pages (from-to)1542-1543
    Number of pages2
    JournalJapanese Journal of Applied Physics
    Volume27
    Issue number8 R
    DOIs
    Publication statusPublished - Aug 1988

    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy(all)

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